CMT01N60GN252

CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-251 TO-252 TO-92 SYMBOL Front View Front View SOURCE Front View D SOURCE SOURCE DRAIN GATE GATE DRAIN GATE DRAIN G 1 2 3 S N-Channel MOSFET 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds θJC θJA TL 1.0 62.5 260 ℃ ℃/W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD 50 -55 to 150 20 ℃ mJ Value 1.0 9.0 ±30 ±40 V V W Unit A 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 1 CMT01N60 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number CMT01N60N251 CMT01N60N252 CMT01N60N92 CMT01N60GN251* CMT01N60GN252* CMT01N60GN92* *Note: G : Suffix for Pb Free Product Package TO-251 TO-252 TO-92 TO-251 TO-252 TO-92 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT01N60 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time ** Negligible, Dominated by circuit inductance (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/μs) VSD ton trr ** 350 500 1.5 V ns ns LS 7.5 nH (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 1.0 A, VGS = 10 V, RG = 18Ω) * (VDS = 400 V, ID = 1.0 A, VGS = 10 V)* RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD 0.5 210 28 4.2 8 21 18 24 8.5 1.8 4 4.5 14 8.0 Ω mhos pF pF pF ns ns ns ns nC nC nC nH VGS(th) 2.0 4.0 V IGSSR 100 nA IGSSF IDSS 0.1 0.3 100 nA mA Symbol V(BR)DSS Min 600 Typ Max Units V * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 2 CMT01N60 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 3 CMT01N60 POWER FIELD EFFECT TRANSISTOR 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 4 CMT01N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-251 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 5 CMT01N60 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-252 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 6 CMT01N60 POWER FIELD EFFECT TRANSISTOR 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 7 CMT01N60 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2006/10/11 Rev. 1.6 Champion Microelectronic Corporation Page 8