CMT14N50N3P

CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ! ! FEATURES ! ! ! Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-3P Top View SYMBOL D G ATE SO URCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 100V, VGS = 10V, IL = 14A, L = 6mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds θJC θJA TL 0.65 40 260 ℃ ℃/W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 14 56 ±20 ±40 190 1.5 -55 to 150 588 V V W W/℃ ℃ mJ Unit A 2002/12/18 Preliminary Champion Microelectronic Corporation Page 1 CMT14N50 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number CMT14N50N3P Package TO-3P ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT14N50 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125℃) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 8.4A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 14 A) Forward Transconductance (VDS = 50 V, ID = 8.4A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 250 V, ID = 14 A, RD = 17Ω, RG = 6.2Ω) * (VDS = 400 V, ID = 14 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 25 250 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 5.0 13 9.3 2038 307 10 15 36 35 29 64 16 26 2.0 100 100 4.0 0.4 7.5 nA nA V Ω V mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 500 Typ Max Units V µA Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 14 A, VGS = 0 V, dIS/dt = 100A/µs) VSD ton trr ** 487 1.5 731 V ns ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2002/12/18 Preliminary Champion Microelectronic Corporation Page 2 CMT14N50 POWER FIELD EFFECT TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS 2002/12/18 Preliminary Champion Microelectronic Corporation Page 3 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 4 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 5 CMT14N50 POWER FIELD EFFECT TRANSISTOR 2002/12/18 Preliminary Champion Microelectronic Corporation Page 6 CMT14N50 POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-3P θ2 A A1 A2 A3 b θ3 b1 C θ1 C1 D D1 D2 D3 D4 e f1 f2 L1 L2 L3 θ1 θ3 θ3 θ2 θ3 θ3 θ3 2002/12/18 Preliminary Champion Microelectronic Corporation Page 7 CMT14N50 POWER FIELD EFFECT TRANSISTOR IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer’s applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2002/12/18 Preliminary Champion Microelectronic Corporation Page 8