CMT2N7002DWG

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. FEATURES High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION SOT-23, SOT-323 SOT-363 SYMBOL D S1 Top View 3 Top View D2 G1 DRAIN SOURCE G GATE 1 2 S2 G2 D1 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002 CMT2N7002G* CMT2N7002WG* CMT2N7002DWG* CMT2N7002X* CMT2N7002WX* CMT2N7002DWX* Package SOT-23 SOT-23 SOT-323 SOT-363 SOT-23 SOT-323 SOT-363 W: Suffix for Package SOT-323 X : Suffix for Halogen Free Product *Note: G : Suffix for Pb Free Product ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0MΩ) Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω) Operating and Storage Temperature Range Thermal Resistance － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TJ, TSTG θJA TL -55 to 150 417 300 ℃ ℃/W ℃ EAS Symbol VDSS VDGR ID IDM VGS VGSM PD Value 60 60 115 800 ±20 ±40 225 1.8 9.6 V V mW mW/℃ mJ Unit V V mA 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 1 CMT2N7002 SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. Characteristic Symbol Min CMT2N7002 Typ Max Units V Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 μA) Drain-Source Leakage Current (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125℃) Gate-Source Leakage Current-Forward (Vgsf = 20 V) Gate-Source Leakage Current-Reverse (Vgsf = -20 V) Gate Threshold Voltage * (VDS = VGS, ID = 250 μA) On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V) Static Drain-Source On-Resistance * (VGS = 10 V, ID = 0.5A) (VGS = 10 V, ID = 0.5A, TJ = 125℃) (VGS = 5.0 V, ID = 50mA) (VGS = 5.0 V, ID = 50mA, TJ = 125℃) Drain-Source On-Voltage * (VGS = 10 V, ID = 0.5A) (VGS = 5.0 V, ID = 50mA) Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 25 V, ID = 500 mA, Vgen = 10 V, RG = 25Ω, RL = 50Ω) * V(BR)DSS 60 IDSS 1.0 0.5 IGSSF IGSSF VGS(th) 1.0 100 -100 2.5 μA mA nA nA V Id(on) RDS(on) 500 mA Ω 7.5 13.5 7.5 13.5 VDS(on) 3.75 0.375 gFS Ciss Coss Crss td(on) td(off) VSD IS ISM 80 50 25 5.0 20 40 -1.5 -115 -800 V mmhos pF pF pF ns ns V mA mA Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) Source Current Continuous (Body Diode) Source Current Pulsed * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 2 CMT2N7002 SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Capacitance 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 3 CMT2N7002 SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 SOT-323 D 3 b1 c1 c With Plating A A1 A2 E E1 Base Metal b Section B-B b b1 c c1 D E 1 e e1 2 E1 b L L1 e e1 θ A2 A A1 See Section B-B 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation θ L L1 Page 4 CMT2N7002 SMALL SIGNAL MOSFET SOT-363 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 5 CMT2N7002 SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. T E L : +886-2-2696 3558 F A X : +886-2-2696 3559 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 6