CMT55N03GN252

CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION Vds=25V RDS(ON)=6 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Drain - Source Voltage Gate -Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol VDS VGS ID IDM TA=25℃ TA=75℃ PD PD TJ / TSTG RθJC 2) Value 25 ±20 55 100 70 42 -55 to150 1.8 50 Unit V V A A W W ℃ ℃/W ℃/W Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction – to –Case Thermal Resistance Junction – to Ambient Thermal Resistance (PCB mount) RθJA Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 1 CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET ORDERING INFORMATION Part Number CMT55N03GN252 Package TO-252 ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise notes) Symbol Parameter Drain-Source Breakdown Voltage Drain-Source On-State Resistancem Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Test Conditions VGS=0V, ID=-250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=-250uA VDS=15V, ID=15A VDS=25V, VGS=0V VGS=±20V , VDS=0V VDS=0V , VGS=1V at 1MHz Min. 25 1.3 - Typ. 7.5 4.5 1.9 3 Max. 9.0 6.0 3 1 ±100 Units V mΩ mΩ V S uA nA Ω Static BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Rg Gate-Source Forward Leakage Gate Resistance 3) Dynamic Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID=20A VDS=15V VGS=5V VDD=15V ID=1A RG=6Ω RL=15Ω VGEN=10V VGS=0V VDS=15V f=1.0MHz - 16.8 6.08 4.93 15.13 4 45.27 7.6 2325.9 330.55 173.91 - nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Symbol VSD Parameter Diode Forward Voltage Max. Diode Forward Current Test Conditions IS=20A, VGS=0V Min. Typ. 0.85 Max. 1.3 20 Units V A Is Notes: Pulse test : Pulse width