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B1S

B1S

  • 厂商:

    CHENG-YI

  • 封装:

  • 描述:

    B1S - SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS - CHENG-YI ELECTRONIC CO., LTD.

  • 详情介绍
  • 数据手册
  • 价格&库存
B1S 数据手册
B1S thru B10S SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC REVERSE VOLTAGE -100 to 1000 Volts FORWARD CURRENT -0.8 Amperes FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead in plated copper MECHANICAL DATA Polarity: Symbol molded on body Weight: 0.0044 ounces, 0.125 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. B1S B2S 200 140 200 B4S 400 280 400 0.8 B6S 600 420 600 B8S 800 560 800 B10S 1000 700 1000 UNITS V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (Note 1) @ TA=40 0 VRRM VRMS VDC 100 70 100 C V(AV) Peak Forward Surge Current 8.3ms single half sine-wave super imposed on rated load (JEDEC Method) Maximum Forward Voltage at 0.4A DC Maximum DC Reverse Current @ TJ=25 C at rated DC Blocking Voltage @ TJ=125 C 0 0 IFSM VF IR CJ R JA 30 A 1.0 5 500 15 75 -55 to +150 -55 to +150 0 V A Typical Junction Capacitance per element (Note2) Typical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range pF C/W 0 TJ TSTG C C 0 NOTES: 1.Mounted on P Board. .C. 2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Ambient. B1S thru B10S SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS RATING AND CHARACTERISTICS CURVES B1S THRU B10S FIG. 2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK RFORWARD SURGE CURRENT, AMPERES 40 CHENG- YI CHENGELECTRONIC FIG. 1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 1.0 0.8 0.6 0.4 MOUNTED ON PC BOARD 30 20 0.2 0.1 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 10 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 10 20 50 100 20 40 60 100 120 o 140 160 AMBIENT TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG. 5 - TYPICAL REVERSE CHARACTERISTICS 100 10 FIG. 4 - TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (mA) TJ=125oC 10 INSTANTANEOUS FORWARD CURRENT, (A) 1.0 1.0 0.1 TJ=25oC 0.1 0.01 0 0.01 0 20 40 60 80 100 120 140 0.2 0.4 0.6 0.8 1.0 TJ=25oC PULSE WIDTH:300 S 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 100 CAPACITANCE, (pF) 10 TJ=25 C, f=1MHz 1.0 1 4 10.0 100 o REVERSE VOLTAGE, VOLTS
B1S
物料型号:STC8H8K64U 器件简介:STC8H8K64U是一款8051内核的微控制器,适用于多种应用场景,包括但不限于工业控制、智能家居、医疗设备等。

引脚分配:该器件拥有64个引脚,包括电源引脚、地引脚、I/O引脚、通信接口引脚等。

参数特性:核心频率最高可达35MHz,内置64KB的程序存储空间和4KB的数据存储空间。

功能详解:具有丰富的外设接口,如定时器、串行通信接口、中断系统等,支持多种通信协议。

应用信息:适用于需要高性能和低功耗的嵌入式系统设计。

封装信息:提供多种封装选项,以适应不同的应用需求和环境条件。

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