RS4005G thru RS410G KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE S INGLE-PHASE
CHENG- YI CHENGELECTRONIC
VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 4.0 Amperes
.189(4.8) .382(9.7) .366(9.3) .118(3.0)X45 .992(25.2) .916(26.0) .173(4.4) .150(3.8) .134(3.4)
.60(15.3) .578(14.7)
.157(4.0)
FEATURES
Rating to 1000V PRV Ideal for printed circuit board Realiable low cost construction utilizing molded plastic technique Plastic material has Underwriters Laboratory flammability classification 94V-O Lead solderable per MIL-STD-202 Meyhod 208 Surge overload rating to 120 Amperes peak Polarity symbols molded on body Mounting position:Any Weight:0.16 ounce 4.6 grams
+
~
.075(1.9) .060(1.5)
~
.145(3.7) .130(3.3) .700(17.8) .677(17.2)
.134(3.4) .122(3.1)
.114(2.9) .098(2.5)
.043(1.1) .035(0.9)
.030(7.70) .287(7.30)
.043(1.1) .031(.80)
All Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RS4005G RS401G RS402G KBJ402G
200 140 200
RS404G
RS406G
RS408G KBJ408G
800 560 800
RS410G KBJ410G
1000 700 1000
KBJ4005G KBJ401G
KBJ404G KBJ406G
400 280 400 4.0 600 420 600
UNITS
V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @ TC=115 C
0
VRRM VRMS VDC V(AV)
50 35 50
100 70 100
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC METHOD) Maximum DC Forward Voltage drop per element at 2.0A DC Maximum DC Reverse Current at rated @ TA=250 C DC Blocking Voltage per element @ TA=125 C
0 0
IFSM
120
A
VF IR CJ R JC TJ TSTG
1.0 5 500
40 5.5
0
V
A
A
PF
Typical Junction Capacitance ( Note 1) Typical Thermal Resistance ( Note 2) Operating Temperature Range Storage Temperature Range
C/W
0
-55 to +150 -55 to +150
C C
0
Notes:1.Measured at 1.0 MHZ and applied reverse voltage of 4.0v DC 2.Thermal Resistance Junction to Case
RS4005G thru RS410G KBJ4005G thru KBJ410G
SINGLE-PHASE SILICON BRIDGE
CHENG- YI CHENGELECTRONIC
RATING AND CHARACTERISTICS CURVES KBJ4005G THRU KBJ410G RS4005G THRU RS410G
Fig.1 - MAXIMUM FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT AMPERES
5 4 120 100 3 80 2 60 1
0 TJ=150C single sine-wave (JEDEC Method)
Fig.4 - MAXIMUM NON-REPETITIVE SURGE CURRENT
60Hz RESISTIVE OR INDUCTIVE LOAD
50 75 100 125 150
40 20 0 1 2 5 10 20 50 100
25
CASE TEMPERATURE, 0C
INSTANTANEOUS FORWARD CURRENT. AMPERES
Fig.2 - TYPICAL FORWARD CHARACTERISTICS
10
0 TJ=150C
NUMBER OF CYCLES AT 60 Hz
Fig.5 - TYPICAL REVERSE CHARACTERISTICS
1.0 1000
TJ=250C
0 TJ=150C
0.1
0 TJ=125C
100 .01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0 TJ=100C
INSTANTANEOUS FORWARD VOLT AGE, VOLTS
10
Fig.3 - TYPICAL JUNCTION CAPACITANCE
100 1.0
TJ=250C f=1.0MHz TJ=250C
CAPACITANCE, pF
50 .01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
10 1 4 10 100
REVERSE VOLTAGE, VOLTS
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