2N7002DSPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement MOS FET V OLTAGE 50 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2 N7002DSPT CURRENT 0.51 Ampere FEATURE * Small surface mounting type. (SC-74/SOT-457) * High density cell design for low R DS(ON) . * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (1) (6) 0.95 0.95 (3) 0.25~0.5 1.4~1.8 (4) SC-74/SOT-457 1.7~2.1 2.7~3.1 CONSTRUCTION * Dual N-Channel Enhancement MARKING * 72DS 0.08~0.2 0.3~0.6 0.935~1.3 0~0.15 2.6~3.0 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-74/SOT-457 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted 2N7002DSPT Units VDSS Drain-Source Voltage 50 50 V V V mA VDGR VGSS ID Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed TA= 25°C TA= 70°C TA= 25°C ±20 510 1500 960 900 -55 to 150 300 PD Maximum Power Dissipation TA= 70°C mW mW °C °C TJ,TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case 130 60 °C/W °C/W 2004-7 RATING CHARACTERISTIC CURVES ( 2N7002DSPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 40 V, VGS = 0 V TC=125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 50 1 0.5 100 -100 V µA mA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 510 m A VGS = 4.5 V, ID = 350 mA 1 1.9 1 1.6 2.5 2 V Ω 4.0 mA 400 mS ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10V VDS = 10 V , I D = 510 mA 1500 DYNAMIC CHARACTERISTICS Qg Qgs Qgd Ciss Coss Crss ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 25 V, VGS = 10 V, I D = 510 mA 1 0.19 0.33 20 13 5 nC VDS = 25 V, VGS = 0 V, f = 1.0 MHz pF VDD = 25V ID = 250 mA, VGS = 10 V, RGEN = 25 Ω VDD = 25 V, ID = 250 mA, VGS = 10 V, RGEN = 25 Ω 6 6 11 5 20 20 20 20 nS Turn-Off Time nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 200 mA (Note 1) 0.8 510 1.5 1.2 mA A V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. RATING CHARACTERISTIC CURVES ( 2N7002DSPT ) Typical Electrical Characteristics 1.5 3 V GS = 10V I D , DRAIN-SOURCE CURRENT (A) 1.2 8.0 7.0 DRAIN-SOURCE ON-RESISTANCE 6 .0 5 .5 RDS(on) , NORMALIZED VG S = 3 .5V 2.5 4 .0 4 .5 5 .0 0.9 5 .0 4 .5 2 5 .5 6 .0 7 .0 8 .0 10 1.5 0.6 4 .0 0.3 3 .5 3 .0 1 0.5 0 0.3 0 0 1 VDS 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 5 0.6 0.9 I D , DRAIN CURRENT (A) 1.2 1.5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 1.8 DRAIN-SOURCE ON-RESISTANCE R DS(ON) NORMALIZED , 1.6 1.4 1.2 1 0.8 0.6 0.4 - 50 2.5 V GS = 10V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.51A V G S = 1 0V 2 TJ = 125°C 1.5 2 5°C 1 - 55°C 0.5 0 0.3 I D -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 0.6 0.9 , DRAIN CURRENT (A) 1.2 1.5 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.5 1.2 25°C 125°C V th, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE V DS = 10V 1.2 I D , DRAIN CURRENT (A) T J = -55°C 1.1 V DS = V GS I D = 250µA 0.9 1 0.6 0.9 0.3 0.8 0 1 2 3 4 5 6 V GS , GATE TO SOURCE VOLTAGE (V) 7 8 0.7 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. RATING CHARACTERISTIC CURVES ( 2N7002DSPT ) Typical Electrical Characteristics (continued) DRAIN-SOURCE BREAKDOWN VOLTAGE 1.16 I D = 250µ A I S , REVERSE DRAIN CURRENT (A) 1.5 1 0.5 V GS = 0V 1.12 1.08 1.04 1 0.96 0.92 0.88 -50 BV DSS , NORMALIZED TJ = 125°C 0.1 2 5°C - 55°C 0.01 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0.001 0.2 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 100 50 10 V V GS , GATE-SOURCE VOLTAGE (V) 8 DS = 25V I D = 0.51A CAPACITANCE (pF) C iss 20 10 5 6 C oss C rss f = 1 MHz 4 2 2 1 0.1 V GS = 0 V 0.2 0.5 1 2 5 10 20 50 0 0 0.2 V DS , DRAIN TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 Q g , GATE CHARGE (nC) 1 1.2 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. 0.7 V DS = 10V 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.3 V GS TJ = -55°C 25°C I D , DRAIN CURRENT (A) 125°C 0.6 0.9 1.2 , GATE TO SOURCE VOLTAGE (V) 1.5 Figure 11. Transconductance Variation with Drain Current and Temperature. RATING CHARACTERISTIC CURVES ( 2N7002DSPT ) Typical Thermal Characteristics 1.2 STEADY-STATE POWER DISSIPATION (W) I D , STEADY-STATE DRAIN CURRENT (A) 0.55 1.1 1a 0.5 1 1a 1b 0.9 1b 0.45 1c 0.8 1c 0.4 4.5"x5" FR-4 Board TA = 2 5 C Still Air VG S = 1 0 V o 0.7 4.5"x5" FR-4 Board TA = 2 5 C Still Air o 0.6 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 0.35 0 0.025 0.05 0.075 0.1 2 2oz COPPER MOUNTING PAD AREA (in ) 0.125 Figure 12. SOT-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 3 2 1 I D , DRAIN CURRENT (A) 0.5 RD S(O N) LIM IT Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 10 0 1m us s 10 ms 0.2 0.1 10 0m s V 0.05 GS = 10V 1s SINGLE PULSE R θJ A = See Note 1c T A = 25°C 1 2 DC 0.02 0.01 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 14. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0 .5 D = 0 .5 0 .2 0 .1 0.05 0 .2 0 .1 P(pk) 0 .05 0 .02 0 .01 R JA (t) = r(t) * R JA θ θ R JA = See Note 1c θ t1 TJ - T t2 0.02 0.01 0 .0 0 0 1 S ingle Pulse = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 A 0 .001 0 .0 1 0 .1 t 1, TIME (sec) 1 10 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDC7002N.SAM