CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
V OLTAGE 60 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
2 N7002EPT
CURRENT 0.250 Ampere
FEATURE
* Small surface mounting type. (SC-70/SOT-323) * High density cell design for low R DS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch.
(3)
SC-70/SOT-323
(2)
1.3±0.1 0.3±0.1
0.65 2.0±0.2 0.65
1.25±0.1
(1)
CONSTRUCTION
* N-Channel Enhancement
MARKING
* 702E
D (3)
0.05~0.2 0.1Min. 2.0~2.45
0.8~1.1 0~0.1
CIRCUIT
(1) G
S (2)
Dimensions in millimeters
SC-70/SOT-323
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
2N7002EPT
Units
VDSS
Drain-Source Voltage
60 60
V V V
VDGR
VGSS
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs)
±20 ±40
250 190 200 150 -55 to 150 300
TA= 25°C TA= 70°C TA= 25°C TA= 70°C
ID PD
Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation
mA mW mW °C °C
TJ,TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
Thermal characteristics
RθJA Thermal Resistance, Junction-to-Ambient 450 °C/W
2005-6
RATING CHARACTERISTIC CURVES ( 2N7002EPT )
Electrical Characteristics T
Symbol Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS IGSSF IGSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = 10 µA VDS = 60 V, VGS = 0 V TC=125°C VGS = 15 V, VDS = 0 V VGS = -15 V, VDS = 0 V
60
70 1 0.5 10 -10
V µA mA nA nA
Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
VGS(th) RDS(ON) VDS(ON) ID(ON) gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA VGS = 4.0 V, ID = 100 mA
1
2.0 1.7 2.5 0.6 0.09
2.5 3.0 4.0 3.75 1.5
V
Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA Drain-Source On-Voltage VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA On-State Drain Current VGS = 10 V, VDS = 7.5VDS(on) VGS = 4.5V, VDS = 10VDS(on) Forward Transconductance VDS = 15 V DS(on), ID = 200 m A 800 500
Ω
V
1800 700 250
mA
mS
DYNAMIC CHARACTERISTICS
Qg Qgs Qgd Ciss Coss Crss ton tr toff tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
VDS = 30 V, VGS = 10 V, I D = 250 mA
0.6 0.06 0.06
1.0 25 5 50 25 5 20
nC
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
25 6 1.2
pF
VDD = 30 V, RL = 200 Ω, ID = 100 mA, VGS = 10 V, RGEN = 10 Ω VDD = 30 V, RL = 200 Ω, ID = 100 mA, VGS = 10 V, RGEN = 10 Ω
7.5 6 7.5 3
nS
Turn-Off Time
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS ISM VSD
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 200 mA (Note 1) 0.85
115 0.8 1.2
mA A V
Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
RATING CHARACTERISTIC CURVES ( 2N7002EPT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
2 .5 6
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current
V G S = 4 .0V 4 .5
VGS = 10V
I D , DRAIN-SOURCE CURRENT (A)
2
9.0
8.0 7.0 6.0
RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5
5 .0 6 .0
1 .5
4
7 .0
3
1
5.0
8 .0 9 .0 10
0 .5
4.0 3.0
0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5
2
0
1 0 0 .4 0 .8 1 .2 I D , DR A IN CURRENT (A) 1 .6 2
Figure 3. On-Resistance Variation with Temperature
6.0
Figure 4. On-Resistance Variation with Drain Current and Temperature
6
V GS = 10V
DRAIN-SOURCE ON-RESISTANCE
V G S = 1 0V
DRAIN-SOURCE ON-RESISTANCE 5
5.0
I D = 250 m A
R DS(on) , NORMALIZED
R DS(ON) , NORMALIZED
TJ = 1 2 5 ° C
4
4.0
3.0
3
25°C
2
2.0
- 55°C
1
1.0
0 -5 0
-2 5
0 25 50 75 100 T , JUN CTION T EMPERATURE (°C) J
125
150
0 0 0 .4 0 .8 1 .2 I D , DRAIN CURRENT (A) 1 .6 2
Figure 5. Transfer Characteristics
2
1 .1 Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
Figure 6. Gate Threshold Variation with Temperature
V DS = VGS I D = 1 mA
VDS = 10V
1 .6 ID , DRAIN CURRENT (A)
T J = -55° C
2 5° C 125°C
1 .0 5
1
1 .2
0 .9 5
0 .8
0 .9
0 .4
0 .8 5
0 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10
0 .8 -50
-25
0 25 50 75 100 TJ , JUNCTION T EM PERATU RE (°C)
125
150
RATING CHARACTERISTIC CURVES ( 2N7002EPT )
Typical Electrical Characteristics (continued)
Figure 7. Breakdown Voltage Variation with Temperature
1.1
Figure 8. Body Diode Forward Voltage Variation with Drain Current
2 1
DRAIN-SOURCE BREAKDO WN VOLTAGE
I D = 250µA
IS , REVERSE DRAIN CURRENT (A)
1.075 1.05 1.025 1 0.975 0.95 0.925 - 50
V GS = 0 V
BV DSS , NORMALIZED
0 .5
TJ = 1 2 5 ° C
0 .1 0 .0 5
25°C -5 5 ° C
0 .0 1 0 .0 0 5
-25
0
25 50 75 100 TJ , JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1 0 .2
0 .4 V SD
0 .6
0 .8
1
1 .2
1 .4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Capacitance Characteristics
60 1.0
Figure 10. Gate Charge Characteristics
C i ss
20
VGS , GATE-SOURCE VOLTAGE (V)
40
V DS = 3 0 V
.8
CAPACITANCE (pF)
10
.6
C o ss
5
.4
2
f = 1 MH z V GS = 0V C r ss
30 50
.2
ID = 2 5 0 m A
1 1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 0 0 0 .1 0 .2 0 .3 Q g , GAT E CHARG E (nC) 0 .4 0.5
Figure 11.
Figure 12. Switching Waveforms
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
RATING CHARACTERISTIC CURVES ( 2N7002EPT )
Typical Electrical Characteristics (continued)
Figure 13. 2N7002EPT Maximum Safe Operating Area
3 2 I D , DRAIN CURRENT (A) 1
RDS (ON) Lim it
100
us
1m
s
0.5
10m s
0.1 0.05
VGS = 10V SINGL E PULS E
10s DC 1s
100
ms
0.01 0.005 1
T A = 25° C
2
5 10 V DS , D RAIN-SOURCE VOLTAGE (V)
20
30
60
80
Figure 14. 2N7002EPT Transient Thermal Response Curve
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05
D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 P(pk)
r(t), NORMALIZED EFFECTIVE
R θJA (t) = r (t) * R θJA Rθ = ( See Datasheet) JA
0.01
S ingle Pulse
t1
t2
0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10
TJ - T A = P * RθJA (t) D uty Cycle, D = t1 /t2
100
300