2SB1132PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. 2 SB1132 PT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-62/SOT-89 ) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 MARKING * HFE(P):P32 * HFE(Q):Q32 * HFE(R):BAR 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 40X40X0.7 mm ceramic board. stor age temperature junction temperature CONDITIONS open emitter open base open collector − − − − − − −55 − MIN. MAX. -40 -32 -5 -1 0.5 2 +150 150 °C °C UNIT V V V A W 2004-03 RATING CHARACTERISTIC ( 2SB1132PT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL IEBO ICBO BVCBO BVCEO BVEBO hFE VCEsat Cob fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 PARAMETER emitter cutoff current collector cut-off current collector-base breakdown voltage VEB=-4V VCB=-20V IC =-50uA IE =-50uA CONDITIONS MIN. − − -40 -32 -5 82 − − − Typ. − − − − − − -200 20 150 MAX. -0.5 -0.5 − − − 390 -500 30 − UNIT uA uA V V V collector-emitter breakdown voltage IC =-1mA emitter-base breakdown voltage DC current transfer ratio collector-emitter saturation voltage collector output capacitance transition frequency VCE=-3V , IC=-0.1A IC/IB=-500mA/-50mA IE = 0; VCB = - 10V ; f = 1 MH z IE = 5 0 mA; VCE = - 5 V ; f = 30 MHz mV pF MHz RATING CHARACTERISTIC CURVES ( 2SB1132PT ) fig1.DCcurrent gain VS. collector current (1) 1000 Ta=25 C hFE-DC CURRENT GAIN O fig2.Collector-emitter saturation voltage V S. collector current -1 -0.5 Ta=25 C IC/IB=10 O hFE-DC CURRENT GAIN 500 VCE=-3V -1V 200 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -50 -100 -200 -500 -1000 -2000 100 50 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 IC - COL L ECTO CURRENT (m A) -10 -20 I C - COLL ECTOR CURRENT (mA ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) fig3.Gain bandwidth product VS. emitter current TRANSITION FREQUENCY : fT (MHZ) Ta=25 C VCE=-5V O fig4.Collector output capacitance VS. collector-base voltage 100 Ta=25 C f=1MHZ IE=0A O 200 100 50 50 20 20 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) 10 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) fig5.Grounded emitter output c haracteristics COLLECTOR CURRENT : Ic (mA) fig6.Grounded emitter propagation c haracteristics -2.0 -1.5 -1.0 COLLECTOR CURRENT : Ic (mA) -500 -200 -100 -50 -20 -10 -5 -2 -1 0 -0.6 -0.8 -3.5 -4.0 -400 -4.5 -5.0 -300 -200 -500 -3.0 -2.5 -0.5 -100 0 IB=0mA 0 -0.4 -0.8 -1.2 -1.6 Ta=25 C -2.0 O -0.2 -0.4 -1.0 -1.2 -1.4 -1.6 COLLECTOR-EMITTERVOLTAGE : VCE( V) COLLECTOR-EMITTERVOLTAGE : VCE( V)