2SB1182PT

CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Epitaxial Transistor V OLTAGE 32 Volts APPLICATION * Power driver and Dc to DC convertor . 2 SB1182PT CURRENT 2 Ampere FEATURE * Small flat package. (DPAK) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .050 (1.27) .030 (0.77) DPAK .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * PNP Switching Transistor .228(5..80) .217 (5.40) .394 (10.00) .354 (9.00) .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .268 (6.80) .252 (6.40) .024 (0.60) (1) (3) (2) .110 (2.80) .087 (2.20) .050 (1.27) .020 (0.51) CIRCUIT (1) B C (3) 1 Base 2 Emitter 3 Collector ( Heat Sink ) .023 (0.58) .018 (0.46) E (2) .020 (0.51) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. -40 -32 -5 -2 -3 -0.5 1500 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2007-6 RATING CHARACTERISTIC CURVES ( 2SB1182PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=-20V IC=0; VEB=-4V VCE=-3V; Note 1 IC=-0.5A SYMBOL ICBO IEBO MIN. TYPE MAX. -1.0 -1.0 UNITS uA uA DC Current Gain hFE 82 - 390 Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Collector Capacitance Transition Frequency IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A IE=ie=0; VCB=-10V; f=1MHz IC=-0.1A; VCE=-5.0V; f=100MHz VCEsat VBEsat CC fT - -0.3 -1.0 55 100 -0.5 -1.5 - Volts Volts pF MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( 2SB1182PT ) Typical Electrical Characteristics Figure 1. CC - Reverse VCB 3000 3000 Figure 2. Cutoff Frequency - IC COLLECTOR CAPACITANCE CC (pF) V CE =-5V 1000 1000 100 CUTOFF FREQUENCY (MHz) 100 10 10 1 -0.1 -0.3 -1.0 -3.0 -10 -30 -100 1 -1 -10 -100 -1000 COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB ( V) COLLECTOR CURRENT I C ( mA) Figure 3. hFE - IC COLLECTOR POWER DISSIPATION PC (W) 1000 500 C OMMON EMITTER V CE =-2V Figure 4. PC - TA 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 (1) (1) Mounted on ceramic substrate ( 2 50mm 2x0.8t ) (2) No heat sink DC CURRENT GAIN hFE 300 100 (2) 50 30 10 -10 -30 -100 -300 -1000 -3000 0 20 40 60 80 100 120 140 160 COLLECTOR CURRENT I C ( mA) AMBIENT TEMPERATURE T A ( OC) Figure 5. VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 -10 Figure 6. VBE(sat) - IC BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) C OMMON EMITTER C OMMON EMITTER I C /I B =10 -5 -3 I C /I B =10 -0.1 -1 -0.05 -0.03 -0.5 -0.3 -0.01 -10 -30 -100 -300 -1000 -3000 -0.1 -10 -30 -100 -300 -1000 -3000 COLLECTOR CURRENT I C ( mA) COLLECTOR CURRENT I C ( mA)