2SB717PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Silicon Power Transistor V OLTAGE 12 Volts CURRENT 3 Ampere 2 SB717PT FEATURE * Small flat package. (SC-62/SOT-89) * Peak pulse current : 10A * Extremely low saturation voltage * PC= 2.0 W * Extremely low equivalent On-resistance SC-62/SOT-89 CONSTRUCTION * PNP Switching Transistor 4.6MAX. 1.7MAX. 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 2 Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ TAMB 2SB717PT -12 -12 -5 -3 -10 -0.5 2000 -55 to +150 -55 to +150 -55 to +150 UNITS Volts Volts Volts Amps Amps Amps mW o C C C o o Note 1. Measured under pulsed conditions. Pulse width=300uS. Duty cycle=2% 2. Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. 2007-04 RATING CHARACTERISTIC CURVES ( 2SB717PT ) 2SB717PT CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector Cut-off Current Emitter Cut-off Current Collector Emitter Cut-off Current CONDITION IC=-100uA IC=-10mA; Note 3 IE=-100uA IE=0; VCB=-10V IC=0; VEB=-4V VCES=-10V IC=-10mA; VCE=-2V IC=-100mA; VCE=-2V IC=-3000mA; VCE=-2V IC=-8000mA; VCE=-2V IC=-10A; VCE=-2V IC=-100mA; IB=-10mA IC=-1000mA; IB=-10mA IC=-3000mA; IB=-50mA IC=-3000mA; IB=-50mA IC=-3000mA; VCE=-2V VCB=-10V; f=1MHz IC=-50mA; VCE=-10V; f=100MHz IC=-2A; VCC=-6V; IB1=IB2=50mA IC=-2A; VCC=-6V; IB1=IB2=50mA SYMBOL BVCBO BVCEO BVEBO ICBO IEBO ICES MIN. -12 -12 -5 300 300 160 60 45 80 TYPE -35 -25 -8.5 475 450 240 100 70 -12 -110 -230 -0.92 -0.85 21 110 70 130 MAX. -0.1 -0.1 -0.1 -20 -150 -320 -1.05 -1.0 30 UNITS Volts Volts Volts uA uA uA DC Current Gain ; Note 3 hFE Collector-Emitter Saturation Voltage; Note 3 Base-Emitter Saturation Voltage; Note 3 Base-Emitter Turn-On Voltage; Note 3 Output Capacitance Transition Frequency Turn-On Time Turn-Off Time VCEsat VBEsat VBEon Cobo fT t(on) t(off) mVolts Volts Volts pF MHz nS nS Note 3. Measured under pulsed conditions. Pulse width=300uS. Duty cycle ≤ 2%