CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT General Purpose Transistor
V OLTAGE 50 Volts
APPLICATION
* Small Signal Amplifier .
2 SC2412MPT
CURRENT 0.15 Ampere
FEATURE
* Small surface mounting type. (SOT-723) * Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (mounted on ceramic substrate). * High saturation current capability.
(3) (2)
SOT-723
0.17~0.27 0.4 1.15~1.25 0.4
(1)
CONSTRUCTION
* NPN Silicon Transistor * Epitaxial planner type
0.75~0.85 0.27~0.37
0.17~0.27 0.75~0.85
MARKING
* HFE(Q):33 * HFE(R):34 * HFE(S):35
C (3)
0.11~0.14
0.45~0.55
CIRCUIT
1.15~1.25
(1) B
E (2)
Dimensions in millimeters
SOT-723
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 150 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-06
RATING CHARACTERISTICS ( 2SC2412MPT)
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=60V IC=0; VEB=7V VCE=6V; Note 1 IC=1mA; Note 2 SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA
DC Current Gain
hFE
120
-
560
Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Output Collector Capacitance Transition Frequency
IC=50mA; IB=5mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz
VCEsat VBEsat Cob fT
-
2 180
0.4 1.1 3.5 -
Volts mVolts pF MHz
Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SC2412MPT)
Fig.1
50
Grounded emitter propagation characteristics
VCE=6V
COLLECTOR CURRENT : IC (mA)
Fig.2
100
Grounded emitter output characteristics (1)
0.50mA
COLLECTOR CURRENT : IC (mA)
Fig.3
10
Grounded emitter output characteristics (2)
30uA 27uA
Ta=25OC
COLLECTOR CURRENT : IC (mA)
20 10 5
Ta=100 OC
25 ΟC 55 OC
80
mA 0.45 A 0.40m 35mA 0. 0.30mA
Ta=25OC
8
24uA 21uA
60
0.25mA 0.20mA
6
18uA 15uA
2 1 0.5 0.2 0.1 0
40
0.15mA 0.10mA
4
12uA 9uA
20
0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0
2
6uA 3uA
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V)
0 0
4
8
IB=0A 12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
RATING CHARACTERISTIC CURVES ( 2SC2412MPT)
Fig.4 DC current gain vs. collector current (1)
500 Ta=25OC
Fig.5 DC current gain vs. collector current (2)
500 Ta=100OC
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig. 6 Collector-emitter saturation voltage vs. collector current
0.5
VCE=5V
Ta=25OC
DC CURRENT GAIN : hFE
200
VCE=5V 3V 1V
DC CURRENT GAIN : hFE
200
25OC -55OC
0.2 IC/IB=50 20 10
100
100
0.1 0.05
50
50
0.02
20 10 0.2
20 10 0.2
0.5 1
2
5
10 2 0
50 100 200
0.5 1
2
5
10 20
50 100 200
0.01 0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current (1)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.8 Collector-emitter saturation voltage vs. collector current (2)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.9 Gain bandwidth product vs. emitter current
TRANSITION FREQUENCY : fT (MHz)
0.5
IC/IB=10
0.5
IC/IB=50
500
Ta=25OC VCE=6V
0.2 Ta=100OC 25OC -55OC
0.2 0.1 0.05
Ta=100OC 25OC -55OC
0.1 0.05
200
0.02
100
0.02 0.01 0.2 0.5 1 2 5 10 20 50 100
0.01 0.2 0.5 1 2 5 10 20 50 100 200
50 0.5
1
2
5
10
20
50
100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.10
Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
Ta=25OC f=1MHz IE=0A IC=0A
Fig.11 Base-collector time constant vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
20
200
Ta=25OC f=32MHZ VCB=6V
10
Cib
100
5
50
2
Co b
20
1
0.2 0.5 1 2 5 10 20 50
10 0.2 0.5 1 2 5 10
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
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