BAS40DWPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching B AS40DWPT FEATURE * Small surface mounting type. (SC-88/SOT-363) * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 200mW. * Peak forward current is 300mA. * Schottky diode array ( Dual common cathode ). (1) (6) SC-88/SOT-363 CONSTRUCTION * Silicon epitaxial planar 1.2~1.4 0.65 0.65 2.0~2.2 WEIGHT * 0.008 grams ( Approx.) (4) 0.15~0.35 (3) 1.15~1.35 MARKING * DW2 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in millimeters SC-88/SOT-363 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1Sec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TRR TJ TSTG BAS40DWPT 40 28 40 0.2 0.6 5.0 5.0 -55 to +125 -65 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o o C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS @IF= 1.0mA Maximum Instantaneous Forward Voltage @IF= 40mA Maximum Average Reverse Current at VR= 30V IR VF 1000 200 nAmps 2004-06 SYMBOL BAS40DWPT 380 mVolts UNITS NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts. 2. Measured at applied froward current of 10mA and reverse current of 10mA. 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( BAS40DWPT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 2 =1 Ta 75 oC FIG. 2 - REVERSE CHARACTERISTICS 10m REVERSE CURRENT, (A) 1m o Ta=125 C 100u 10u 1u 100n 10n 5 o C 25 o o 100 C o 75 C o 50 C C 1m 100u -25 o C o 25 C 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE, (V) 0 10 20 30 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE Ta =25oC f=1MHz 50 20 10 5 2 1 0 2 4 6 8 10 AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 12 14 0 25 50 75 100 o 125 150 REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, ( C)