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BAT54WAPT

BAT54WAPT

  • 厂商:

    CHENMKO(力勤)

  • 封装:

  • 描述:

    BAT54WAPT - SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere - Chenmko Enterprise Co. Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT54WAPT 数据手册
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching B AT54WAPT FEATURE * Small surface mounting type. (SC-70/SOT-323) * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 200mW. * Peak forward current is 300mA. 1.3±0.1 (2) (3) (1) SC-70/SOT-323 0.65 2.0±0.2 0.65 CONSTRUCTION * Silicon epitaxial planar 0.3±0.1 1.25±0.1 MARKING * 3H 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1Sec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TRR TJ TSTG BAT54WAPT 30 21 30 0.2 0.6 10 5.0 +150 -55 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o o C C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS @ @ @ @ @ IF= 0.1 mA IF= 1.0 mA IF= 10 mA IF= 30 mA IF= 100 mA SYMBOL BAT54WAPT 240 320 400 500 1000 2.0 UNITS Maximum Instantaneous Forward Voltage VF mVolts Maximum Average Reverse Current at VR= 25V IR uAmps 2002-8 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. Measured at applied froward current of 10mA and reverse current of 10mA . 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( BAT54WAPT ) FIG. 1 - FORWARD CHARACTERISTICS 10 FORWARD CURRENT, (A) REVERSE CURRENT, (A) 1 10m 1m o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE, (V) oC o 2 5 75 C 100u 10u 1u 100n 10n 0 10 o 100 C o 75 C o 50 C =1 Ta 25 o C - 25 o C o 25 C 20 30 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) Ta =25oC f=1MHz 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 0 25 50 75 100 o 125 150 AMBIENT TEMPERATURE, ( C)
BAT54WAPT
### 物料型号 - 型号:BAT54WAPT

### 器件简介 - 类型:肖特基势垒二极管(Schottky Barrier Diode) - 电压:30伏特(V) - 电流:0.2安培(A) - 应用特点: - 超高速开关 - 小型表面安装型(SC-70/SOT-323) - 高速(TRR=2.5纳秒典型值) - 适合高封装密度

### 引脚分配 - 封装:SC-70/SOT-323

### 参数特性 - 最大总功率耗散:200毫瓦(mW) - 峰值正向电流:300毫安(mA)

### 功能详解 - 硅外延平面:标记为3H - 电路:2.0~2.45

### 应用信息 - 最大反复峰值反向电压:30伏特(VARM) - 最大RMS电压:21伏特(VRMS) - 最大直流阻断电压:30伏特(Voc) - 最大平均正向整流电流:0.2安培(Io) - 峰值正向浪涌电流1秒:0.6安培(IFSM) - 典型结电容:10皮法拉(pF)(注1) - 最大反向恢复时间:5.0纳秒(TRR)(注2) - 最大工作温度范围:+150摄氏度(TJ) - 存储温度范围:-55至+150摄氏度(TSTG)

### 封装信息 - 尺寸:以毫米为单位,具体尺寸图示已提供。
BAT54WAPT 价格&库存

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