CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SWITCHING DIODE VOLTAGE 75 Volts CURRENT 0.15 Ampere
APPLICATION
* Ultra high speed switching
B D4148N1APT
FEATURE
* SmaBD surface mounting type. (FBPT-923) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Peak forward current is 500mA.
0.37(REF.) 0.5±0.05 1.0±0.05
FBPT-923
CONSTRUCTION
* Silicon epitaxial planar
0.25(REF.) 0.05±0.04
1.0±0.05
0.68±0.05 0.42±0.05
CIRCUIT
(2)
(1)
0.3±0.05 0.26±0.05
(3)
Dimensions in millimeters
FBPT-923
UNITS Volts Volts Volts Amps Amps pF nSec
o
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Non-Repetitive Peak Reverse Voltage Maximum Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Thermal Resistance Maximum Operating and Storage Temperaturd Range R @1Sec @1.0uSec SYMBOL VRM VRRM VRWM VDC VRMS IO IFSM CJ trr
JA
BD4148N1APT 100 75 53 0.15 1.0 2.0 4.0 4.0 350 -65 to +150
C/W
o
TJ,TSTG
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 10 mA VR= 20V @TJ=25oC VR= 75V @TJ=25oC VR= 20V @TJ=150oC VR= 70V @TJ=150oC SYMBOL VF BD4148N1APT 1.0 5.0 25 30 50 UNITS Volts
Maximum Average Reverse Current
IR
uAmps
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and RL= 100 ohms. 3. ESD sensitive product handling required.
2006-07
RATING CHARACTERISTIC CURVES ( BD4148N1APT )
FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V)
o Ta=125oC 7 5o C 25oC -25 C
FIG. 2 - REVERSE CHARACTERISTICS 1m REVERSE CURRENT, (A) 0.1m 10u 1u 100n
25oC Ta=125oC 75oC
10n 1n 0 20 40 60 80 100 120 REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE REVERSE RECOVERY TIME, (nS) 10 JUNCTION CAPACITANCE, (pF) 5 2 1 0.5 0.2 0.1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) 6
FIG. 4 - REVERSE RECOVERY TIME CHARATERISTICS
IR=1mA VR=6V IRR=1/10IR
4
2
0
0
10
20
30
FORWARD CURRENT, (mA)
PEAK FORWARD SURGE CURRENT, (A)
10.0 5.0 2.0 1.0 0.5 0.2 0.1 0.1
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PULSE Single pulse
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
0.01µF D.U.T.
5 PULSE GENERATOR OUTPUT 50 100 SAMPLING OSCILLOSCOPE
1
10
100
1000
10000
PULSE WIDTH, (Sec)
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