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BZX79C47PT

BZX79C47PT

  • 厂商:

    CHENMKO(力勤)

  • 封装:

  • 描述:

    BZX79C47PT - SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 51V - Chenmko Enterprise Co. Lt...

  • 详情介绍
  • 数据手册
  • 价格&库存
BZX79C47PT 数据手册
C HENMKO ENTERPRISE CO.,LTD AXIAL LEAD SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 51V BZX79C 2V4PT THRU BZX79C 51PT FEATURE * * * * * High temperature soldering type. ESD rating of class 3(>16 kV) per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction. Low temperature coefficient voltage .022 (0.56) DIA. .018 (0.46) 1.02 (26.0) MIN. DO-35 MECHANICAL * * * * * Axial-lead hermetically sealed package. DO-35 Packaging. Cathode indicated by polarity band. Mounting position: Any. Weight: Approx. 0.13g. .165 (4.2) MAX. .079 (2.0) MAX. 1.02 (26.0) MIN. DIA. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified. Dimensions in inches and (millimeters) DO-35 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Zener Current ( see Table "Characteristics" ) Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range @TL=75oC,Lead Length=3/8" SYMBOL PD TJ TSTG VALUE 500 +200 -65 to +200 UNITS mW o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R JA MIN. - TYP. - MAX. 300 1.0 UNITS o C/W VF Volts 2001-6 NOTES : 1. The numbers listd have a standaerd tolerance on the normal zener voltage of +5%. 2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10% of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve to eliminate unstable units. 3. Valid provided that electrodes at distance of 8mm from case are kept ambient temperature. 4. Measured under thermal equilibrium and DC test conditions. 5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT. 6. Measured at IZT= 2mA and IZK= 0.5mA. ELECTRICAL CHARACTERISTIC ( BZX79C 2V4PT THRU BZX79C 51PT ) TYPE Nominal Zener voltage at IZT VZ (V) 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 Zener Voltage Range Test current Zener Voltage at IZT (mA) VZ (V) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.28 ~ 2.56 2.5 ~ 2.9 2.8 ~ 3.2 3.1 ~ 3.5 3.4 ~ 3.8 3.7 ~ 4.1 4.0 ~ 4.6 4.4 ~ 5.0 4.8 ~ 5.4 5.2 ~ 6.0 5.8 ~ 6.6 6.4 ~ 7.2 7.0 ~7.9 7.7 ~ 8.7 8.5 ~ 9.6 9.4 ~ 10.6 10.4 ~ 11.6 11.4 ~ 12.7 12.4 ~ 14.1 13.8 ~ 15.6 15.3 ~17.1 16.8 ~ 19.1 18.8 ~ 21.2 20.8 ~ 23.3 22.8 ~ 25.6 25.1 ~ 28.9 28 ~ 32 31 ~ 35 34 ~ 38 37 ~ 41 40 ~ 46 44 ~ 50 48 ~ 54 Maximum Zener impedance ZZT at IZT () 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80(1) 80(1) 80(1) 90(1) 130(1) 150(1) 170(1) 180(1) at IZK (mA) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ZZK () 600 600 600 600 600 600 500 480 400 150 80 80 80 200 100 150 150 150 170 200 200 225 225 250 250 300(2) 300(2) 325(2) 350(2) 350(2) 375(2) 375(2) 400(2) Maximum Type reverse leakage current temperature coefficient at IR at VR TA= 25oC o (uA) (V) VZ (%/ C) 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.5 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 1 1 1 2 3 5 6 7 7.5 8.5 9 10 11 12 14 15 17 18 20 22 24 27 28 32 35 38 -0.08~-0.06 -0.08~-0.06 -0.08~-0.06 -0.08~-0.05 -0.08~-0.04 -0.07~-0.03 -0.04~-0.01 -0.03~+0.01 -0.02~+0.05 -0.01~+0.06 0.015~0.06 0~0.07 0.01~0.08 0.01~0.09 0.01~0.09 0.02~0.10 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 Maximum regulator current at TA= 50oC IZM (mA) 167 135 125 115 105 95 90 85 80 70 64 58 53 47 43 40 36 32 29 27 24 21 20 18 16 14 13 12 11 10 9.2 7.8 21 BZX79C 2V4PT BZX79C 2V7PT BZX79C 3V0PT BZX79C 3V3PT BZX79C 3V6PT BZX79C 3V9PT BZX79C 4V3PT BZX79C 4V7PT BZX79C 5V1PT BZX79C 5V6PT BZX79C 6V2PT BZX79C 6V8PT BZX79C 7V5PT BZX79C 8V2PT BZX79C 9V1PT BZX79C 10PT BZX79C 11PT BZX79C 12PT BZX79C 13PT BZX79C 15PT BZX79C 16PT BZX79C 18PT BZX79C 20PT BZX79C 22PT BZX79C 24PT BZX79C 27PT BZX79C 30PT BZX79C 33PT BZX79C 36PT BZX79C 39PT BZX79C 43PT BZX79C 47PT BZX79C 51PT NOTES: 1. at IZT= 2.0mA. 2. at IZK= 0.5mA. RATING CHARACTERISTIC CURVE ( BZX79C 2V4PT THRU BZX79C 51PT )
BZX79C47PT
1. 物料型号:BZX79C系列,包括BZX79C 2V4PT至BZX79C 51PT。

2. 器件简介:该系列为硅平面功率齐纳二极管,电压范围从2.4V至51V,具有轴向引线和无铅封装。

3. 引脚分配:轴向引线,通过DO-35封装,阴极由极性带表示。

4. 参数特性: - 工作温度范围:+200℃。 - 存储温度范围:-65至+200℃。 - 热阻:300°C/W。 - 最大瞬时正向电压:1.0V。

5. 功能详解:齐纳二极管用于稳定电压,具有低温度系数电压和硅氧化物钝化结。它们适用于高温度焊接,符合人体模型ESD等级3(>16kV)。

6. 应用信息:文档中未提供具体的应用案例,但齐纳二极管通常用于电压稳定和保护电路。

7. 封装信息:DO-35封装,轴向引线,密封包装,重量约为0.13g。
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