CH3904SPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor V OLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. C H3904SPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * Dual NPN Switching Transistor (4) 0.15~0.35 (3) 1.15~1.35 MARKING * NN 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 4 1 3 Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 200 200 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C 2004-10 UNIT RATING CHARACTERISTIC CURVES ( CH3904SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 833 UNIT K/W CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT NF collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 40 70 100 60 30 − − 650 − − − 300 − − − − − − 200 300 850 950 4 8 − 5 mV mV mV mV pF pF MHz dB − − MIN. MAX. 50 50 UNIT nA nA Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − − − − − − 65 35 35 240 200 50 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CH3904SPT ) Total power dissipation Ptot = f (TS) Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 360 2 mA mW IC 300 270 10 2 5 V CE V BE P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 °C 150 TS 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 V BE sat , V CE sat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC D= tp T tp DC current gain hFE = f (I C) VCE = 10V, normalized 10 1 h FE 5 T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 125 C 25 C 10 0 -55 C 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 10 -1 10 -1 5 10 0 5 10 1 mA 10 2 2 ΙC RATING CHARACTERISTIC CURVES ( CH3904SPT ) Short-circuit forward current transfer ratio h21e = f (IC) VCE = 10V, f = 1MHz 10 3 h 21e h 22e Open-circuit output admittance h22e = f (IC) VCE = 10V, f = 1MHz 10 2 s 5 5 10 2 10 1 5 5 10 1 -1 10 5 10 0 mA 10 1 10 0 -1 10 5 10 0 ΙC mA ΙC 10 1 Delay time td = f (IC ) Rise time tr = f (IC) Storage time t stg = f (IC) 10 3 ns t r ,t d tr td 10 2 10 3 ns ts h FE = 10 25 C 125 C 10 2 h FE = 20 10 h FE = 20 10 VCC = 3 V 40 V 15 V 10 1 V BE = 2 V 0V 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 10 0 0 10 5 10 1 5 10 2 ΙC mA 10 3 ΙC RATING CHARACTERISTIC CURVES ( CH3904SPT ) Fall time tf = f (IC) 10 3 ns tf 25 C 125 C VCC = 40 V 10 2 Rise time tr = f (IC) 10 3 ns tr 25 C 10 h FE = 20 2 125 C VCC = 40 V h FE = 10 10 1 h FE = 10 10 1 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC 10 0 0 10 5 10 1 5 10 2 mA 10 3 ΙC Input impedance h11e = f (IC) VCE = 10V, f = 1kHz 10 2 h 11e k Open-circuit reverse voltage transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz 10 -3 h 12e 10 1 5 10 -4 10 0 5 5 10 -1 10 -1 5 10 0 mA 10 1 10 -5 10 -1 5 10 0 mA 10 1 ΙC ΙC RATING CHARACTERISTIC CURVES ( CH3904SPT ) Test circuits Delay and rise time +3.0 V 300 ns D = 2% +10.9 V 10 k 0 -0.5 V 275 C