CH411N1PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.5 Ampere APPLICATION * Low power rectification C H411N1PT FEATURE * Small surface mounting type. (FBPT-923) * Low VF. (VF=0.43V Typ. at 0.5A) * High reliability 0.37(REF.) 0.5±0.05 1.0±0.05 FBPT-923 CONSTRUCTION * Silicon epitaxial planar 0.25(REF.) 0.05±0.04 1.0±0.05 0.68±0.05 0.42±0.05 CIRCUIT (2) (1) 0.3±0.05 0.26±0.05 (3) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG Dimensions in millimeters FBPT-923 CH411N1PT 40 28 20 0.5 3.0 20 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 10mA Maximum Instantaneous Forward Voltage at IF(2)= 500mA Maximum Average Reverse Current at VR= 10V SYMBOL VF(1) VF(2) IR CH411N1PT 0.30 0.50 30 UNITS Volts Volts uAmps 2006-07 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH411N1PT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) Ta =1 25 o 75 o C C 25 o C FIG. 2 - REVERSE CHARACTERISTICS 10m o Ta=125 C REVERSE CURRENT, (A) 1m o 75 C -25 o C Typ. pulse measurement 100u 10u 1u 0.1u o 25 C Typ. pulse measurement 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE , (pF) 100 10 1 0 5 10 15 20 25 REVERSE VOLTAGE, (V)