CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.5 Ampere
APPLICATION
* Low power rectification
C H411N1PT
FEATURE
* Small surface mounting type. (FBPT-923) * Low VF. (VF=0.43V Typ. at 0.5A) * High reliability
0.37(REF.) 0.5±0.05 1.0±0.05
FBPT-923
CONSTRUCTION
* Silicon epitaxial planar
0.25(REF.) 0.05±0.04
1.0±0.05
0.68±0.05 0.42±0.05
CIRCUIT
(2)
(1)
0.3±0.05 0.26±0.05
(3) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG
Dimensions in millimeters
FBPT-923
CH411N1PT 40 28 20 0.5 3.0 20 +125 -40 to +125
UNITS Volts Volts Volts Amps Amps pF
o
C C
o
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 10mA Maximum Instantaneous Forward Voltage at IF(2)= 500mA Maximum Average Reverse Current at VR= 10V SYMBOL VF(1) VF(2) IR CH411N1PT 0.30 0.50 30 UNITS Volts Volts uAmps 2006-07
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( CH411N1PT )
FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V)
Ta =1 25 o 75 o C C 25 o C
FIG. 2 - REVERSE CHARACTERISTICS 10m
o Ta=125 C
REVERSE CURRENT, (A)
1m
o 75 C
-25 o C
Typ. pulse measurement
100u 10u 1u 0.1u
o 25 C
Typ. pulse measurement
0
5
10
15
20
25
30
35
REVERSE VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE , (pF)
100
10
1 0 5 10 15 20 25 REVERSE VOLTAGE, (V)
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