CH411S-40PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.5 Ampere APPLICATION * Low power rectification C H411S-40PT FEATURE * Small surface mounting type. (SC-79/SOD-523) * Low VF. (VF=0.43V Typ. at 0.5A) * High reliability (1) SC-79/SOD-523 Cathode (2) 0.25~0.35 0.75~0.85 CONSTRUCTION * Silicon epitaxial planar 1.1~1.3 MARKING *P 0.5~0.77 0.7~0.17 CIRCUIT (2) 1.5~1.7 (1) Dimensions in millimeters SC-79/SOD-523 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH411S-40PT 40 28 20 0.5 3.0 20 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 10mA Maximum Instantaneous Forward Voltage at IF(2)= 500mA Maximum Average Reverse Current at VR= 10V SYMBOL VF(1) VF(2) IR CH411S-40PT 0.30 0.50 30 UNITS Volts Volts uAmps 2007-04 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH411S-40PT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) =1 25 o 75 o C C 25 o C FIG. 2 - REVERSE CHARACTERISTICS 10m o Ta=125 C REVERSE CURRENT, (A) 1m o 75 C -25 o C Typ. pulse measurement 100u 10u 1u 0.1u o 25 C Ta Typ. pulse measurement 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE , (pF) 100 10 1 0 5 10 15 20 25 REVERSE VOLTAGE, (V)