CH450FPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * Low power rectification C H450FPT FEATURE * Small surface mounting type. (SC-70/SOT-323) * Low IR. (IR=80nA Typ.) * High reliability (2) (3) SC-70/SOT-323 1.3±0.1 0.65 2.0±0.2 0.65 (1) CONSTRUCTION * Silicon epitaxial planar 0.3±0.1 1.25±0.1 MARKING * 3B 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH450FPT 45 32 40 0.1 1.0 6 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 10mA Maximum Average Reverse Current at VR= 10V SYMBOL VF IR CH450FPT 0.45 1.0 UNITS Volts uAmps 2002-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH450FPT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 FORWARD VOLTAGE, (V) 5 C o FIG. 2 - REVERSE CHARACTERISTICS 1m REVERSE CURRENT, (A) 100u 10u o 75 C o Ta=125 C 25 o -25 o C C = Ta 75 12 o C 1u 100n 10n o 25 C 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 50 20 10 5 2 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERAING CURVE 0 25 50 75 100 o 125 150 AMBIENT TEMPERATURE, ( C)