CH451N1PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.5 Ampere APPLICATION * Low power rectification C H451N1PT FEATURE * Small surface mounting type. (FBPT-923) * Ultra low IR. (VF=0.55V Typ. at 0.5A) * High reliability 0.37(REF.) 0.5±0.05 1.0±0.05 FBPT-923 CONSTRUCTION * Silicon epitaxial planar 0.25(REF.) 0.05±0.04 1.0±0.05 0.68±0.05 0.42±0.05 CIRCUIT (2) (1) 0.3±0.05 0.26±0.05 (3) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG Dimensions in millimeters FBPT-923 CH451N1PT 30 21 30 0.5 2.0 15 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage @ IF(1)= 100mA @ IF(2)= 500mA @ TA= 25OC Maximum Average Reverse Current at VR= 5.0V @ TA= 45OC SYMBOL VF(1) VF(2) IR(1) IR(2) CH451N1PT 0.385 0.55 10 40 UNITS Volts Volts uAmps uAmps 2006-07 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH451N1PT ) FIG. 1 - FORWARD CHARACTERISTICS 10A 100m REVERSE CURRENT, (A) 10m 1m 100u 10u 1u 100n o 75 C o 45 C o 25 C FIG. 2 - MAXIMUM REVERSE CHARACTERISTICS FORWARD CURRENT, (A) 1A 100m o Ta=125 C 10m 1m 75oC o -25 C o 25 C o -25 C 100u 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 REVERSE VOLTAGE, (V) 30 40 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 1000 JUCTION CAPACITANCE (pF) 100 10 1 0 10 20 REVERSE VOLTAGE, (V) 30 40