CH501S-40PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.1 Ampere APPLICATION * Low power rectification C H501S-40PT FEATURE * Small surface mounting type. (SC-79/SOD-523) * Low VF. (VF=0.43V Typ. at 100mA) * High reliability (1) SC-79/SOD-523 Cathode (2) 0.25~0.35 0.75~0.85 CONSTRUCTION * Silicon epitaxial planar 1.1~1.3 MARKING *A 0.5~0.77 0.07~0.17 CIRCUIT (2) 1.5~1.7 (1) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range o Dimensions in millimeters SC-79/SOD-523 SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH501S-40PT 45 32 40 0.1 1.0 6.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 10mA Maximum Instantaneous Forward Voltage at IF(2)= 100mA Maximum Average Reverse Current at VR= 10V SYMBOL VF(1) VF(2) IR CH501S-40PT 0.34 0.55 30 UNITS Volts Volts uAmps 2002-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH501S-40PT ) FIG. 1 - FORWARD CHARACTERISTICS 1000 FORWARD CURRENT, (mA) REVERSE CURRENT, (A) 10m o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS 1m 100u 10u 1u 0.1u o 75 C 100 Ta =1 2 75 o C 10 o 25 C 5 C o 25 o C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE, (V) -25 o C 0 10 20 30 40 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 10 10 5 10 15 20 25 30 35 25 50 75 100 125 150 REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, (oC)