CH520G-30PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * Low power rectification and high speed switching C H520G-30PT FEATURE * Extremely small surface mounting type. (SOD-723) * Low IR. (IR=0.1uA Typ.) * High reliability 0.25~0.35 0.55~0.65 SOD-723 CONSTRUCTION * Silicon epitaxial planar (1) 0.9~1.1 (2) MARKING *2 0.49~0.65 0.08~0.15 CIRCUIT (2) 1.3~1.5 (1) Dimensions in millimeters SOD-723 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH520G-30PT 30 21 30 0.2 1.0 6.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 200mA Maximum Average Reverse Current at VR= 10V SYMBOL VF IR CH520G-30PT 0.60 1.0 UNITS Volts uAmps 2002-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH520G-30PT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) REVERSE CURRENT, (A) 100m 10m C C o o FIG. 2 - REVERSE CHARACTERISTICS 1m 100u 10u 1u o 25 C o Ta=125 C o 75 C 75 Ta = 25 o C 12 1m 100u 10u 1u 0 5 -25 o C 100n o -25 C 10n 1n 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 30 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE f=1MHz AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 10 1 0 10 20 30 REVERSE VOLTAGE, (V) 0 25 50 75 100 o 125 150 AMBIENT TEMPERATURE, ( C)