CH521G-30PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.2 Ampere APPLICATION * Low current rectification and high speed switching C H521G-30PT FEATURE * Extremely small surface mounting type. (SOD-723) * Io=200mA guaranteed despite size * Low VF. (VF=0.40V Typ. at 200mA) 0.25~0.35 0.55~0.65 SOD-723 CONSTRUCTION * Silicon epitaxial planar (1) 0.9~1.1 (2) MARKING *3 0.49~0.65 0.08~0.15 CIRCUIT (2) 1.3~1.5 (1) Dimensions in millimeters SOD-723 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH521G-30PT 30 21 30 0.2 1.0 6.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 200mA Maximum Average Reverse Current at VR= 10V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10 volts. 2. ESD sensitive product handling required. SYMBOL VF IR CH521G-30PT 0.50 30.0 UNITS Volts uAmps 2002-5 RATING CHARACTERISTIC CURVES ( CH521G-30PT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) REVERSE CURRENT, (A) 100m 10m 1m 100u 10u 1u 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE, (V) 5 o FIG. 2 - REVERSE CHARACTERISTICS 10m o Ta=125 C 1m o 75 C -25 o C 2 =1 Ta C 75 o C 100u 10u 1u 100n 10n 0 10 20 30 REVERSE VOLTAGE, (V) o -25 C o 25 C 25 o C FIG. 3 - TYPICAL JUNCTION CAPACITANCE 20 AVERAGE FORWARD CURRENT, (%) JUNCTION CAPACITANCE , (pF) Ta =25oC f=1MHz 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 16 12 8 4 0 0 5 10 15 20 25 REVERSE VOLTAGE, (V) 0 25 50 75 100 o 125 150 AMBIENT TEMPERATURE, ( C)