CH548TSPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * General purpose detection * High speed switching C H548TSPT FEATURE * Small surface mounting dual element linear type. (SC-75/SOT-416) * Low VF and low IR. * High reliability (3) SC-75/SOT-416 0.1 0.2±0.05 0.5 1.6±0.2 0.5 (2) 1.0±0.1 (1) CONSTRUCTION * Silicon epitaxial planar 0.1 0.3±0.05 0.1 0.2±0.05 0.8±0.1 MARKING * 3N 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-75/SOT-416 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH548TSPT 30 21 30 0.1 0.5 4.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 10mA Maximum Average Reverse Current at VR= 10V SYMBOL VF IR CH548TSPT 0.45 0.5 UNITS Volts uAmps 2003-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH548TSPT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) REVERSE CURRENT, (A) 100m 10m 12 5 75 oo C C C o FIG. 2 - REVERSE CHARACTERISTICS 1m 100u 10u 1u o 25 C o Ta=125 C o 75 C 75 Ta = 25 o C 1m 100u 10u 1u 0 0.1 -25 o C 100n o -25 C 10n 1n 0.2 0.3 0.4 0.5 0.6 0.7 0 10 20 30 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE f=1MHz AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 10 1 0 10 20 30 REVERSE VOLTAGE, (V) 0 25 50 75 100 o 125 150 AMBIENT TEMPERATURE, ( C)