CH551H-30PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.5 Ampere APPLICATION * Low power rectification C H551H-30PT FEATURE * Small surface mounting type. (SC-76/SOD-323) * Ultra low VF. (VF=0.41V Typ. at 0.5A) * High reliability (1) SC-76/SOD-323 Cathode Band (2) 0.25~0.4 1.15~1.4 CONSTRUCTION * Silicon epitaxial planar 1.6~1.8 MARKING *K 0.6~1.0 0.1Max. 0.08~0.177 0.25~0.45 2.3~2.7 CIRCUIT (2) (1) Dimensions in millimeters SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH551H-30PT 30 21 20 0.5 2.0 15 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 100mA Maximum Instantaneous Forward Voltage at IF(2)= 500mA Maximum Average Reverse Current at VR= 20V SYMBOL VF(1) VF(2) IR CH551H-30PT 0.36 0.47 100 UNITS Volts Volts uAmps 2002-5 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH551H-30PT ) FIG. 1 - FORWARD CHARACTERISTICS 10A 100m REVERSE CURRENT, (A) 10m 1m 100u 10u 1u 100n o -25 C o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS FORWARD CURRENT, (A) 1A o 75 C 100m 10m 1m o Ta=125 C 75oC o 25 C 25oC o -25 C 100u 0.0 0.1 0.2 0.3 0.4 0.5 0 10 20 30 40 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (A) 1000 JUCTION CAPACITANCE (pF) 1.0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 100 0.5 10 1 0 0 0 25 50 75 100 125 150 CASE TEMPERATURE, (oC) 10 20 30 40 REVERSE VOLTAGE, (V)