CH715TSPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching C H715TSPT FEATURE * Small surface mounting dual element linear type. (SC-75/SOT-416) * Low VF and low IR. * High reliability (3) SC-75/SOT-416 0.1 0.2±0.05 0.5 1.6±0.2 0.5 (2) 1.0±0.1 (1) CONSTRUCTION * Silicon epitaxial planar 0.1 0.3±0.05 0.1 0.2±0.05 0.8±0.1 MARKING * TI 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT (2) (1) (3) Dimensions in millimeters SC-75/SOT-416 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH715TSPT 40 28 40 0.03 0.2 2.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 1mA Maximum Average Reverse Current at VR= 10V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. SYMBOL VF IR CH715TSPT 0.37 1.0 UNITS Volts uAmps 2 004-10 RATING CHARACTERISTIC CURVES ( CH715TSPT) FIG. 1 - FORWARD CHARACTERISITICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 25 C - 25oC o FIG. 2 - REVERSE CHARACTERISTICS 100u REVERSE CURRENT, (A) 10u 1u 25oC Ta =125oC 75oC Typ. pulse measurement Ta =125oC 75oC 100n 10n 1n 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) -25oC FIG. 3 - TYPICAL JUNCTION CAPACITANCE 100 REVERSE RECOVERY TIME, (nS) JUNCTION CAPACITANCE, (pF) 10 5 2 1 0.5 0.2 0.1 0 5 10 15 20 25 FIG. 4 REVERSE RECOVERY TIME CHARACTERISTICS 10 1 0.1 REVERSE VOLTAGE, (V) 0 4 8 12 16 20 24 28 FORWARD CURRENT, (mA)