CH751H-40PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * High speed switching for detection C H751H-40PT FEATURE * Small surface mounting type. (SC-76/SOD-323) * Low VF and low IR * High reliability (1) SC-76/SOD-323 Cathode Band (2) 0.25~0.4 1.15~1.4 CONSTRUCTION * Silicon epitaxial planar 1.6~1.8 MARKING * JV 0.6~1.0 0.1Max. 0.08~0.177 0.25~0.45 2.3~2.7 CIRCUIT (2) (1) Dimensions in millimeters SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH751H-40PT 40 28 40 0.03 0.2 2.0 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF= 1mA Maximum Average Reverse Current at VR= 30V NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2. ESD sensitive product handling required. SYMBOL VF IR CH751H-40PT 0.37 0.5 UNITS Volts uAmps 2001-6 RATING CHARACTERISTIC CURVES ( CH751H-40PT ) FIG. 1 - FORWARD CHARACTERISTICS 1000m FORWARD CURRENT, (A) REVERSE CURRENT, (A) 100m 10m 5 C o FIG. 2 - REVERSE CHARACTERISTICS 100u Ta =125oC Typ. pulse measurement 10u 1u 75oC =1 2 Ta 1m 100u 10u 1u 75oC 25oC -25oC 25oC 100n 10n 1n - 25oC Typ. pulse measurement 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 20 25 30 35 FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE, (pF) 50 Ta = 25oC f = 1MHz 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V)