CH801H-30PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * Low power rectification C H801H-30PT FEATURE * Small surface mounting type. (SC-76/SOD-323) * Low VF. (VF=0.37V Typ. at 100mA) * High reliability (1) SC-76/SOD-323 Cathode Band (2) 0.25~0.4 1.15~1.4 CONSTRUCTION * Silicon epitaxial planar 1.6~1.8 MARKING * JS 0.6~1.0 0.1Max. 0.08~0.177 0.25~0.45 2.3~2.7 CIRCUIT (2) (1) Dimensions in millimeters SC-76/SOD-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 10 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range o SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH801H-30PT 30 21 30 0.1 1.0 6.0 -40 to +125 -55 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS at IF= 100mA Maximum Instantaneous Forward Voltage at IF= 1.0 mA Maximum Average Reverse Current at VR= 30V IR VF 0.37 1.0 Volts uAmps 2002-5 SYMBOL CH801H-30PT 0.45 UNITS Volts NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH801H-30PT ) FIG. 1 - FORWARD CHARACTERISTICS 1000 FORWARD CURRENT, (mA) REVERSE CURRENT, (A) 1m o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS 100u 10u 1u 0.1u 0.01u o 75 C 100 Ta= 125 o C 75 oC o 25 C 10 o 25 C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE, (V) -25 oC 0 10 20 30 40 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE AVERAGE FORWARD CURRENT, (%) 100 JUNCTION CAPACITANCE , (pF) 120 100 80 60 40 20 0 0 FIG. 4 - TYPICAL FORWARD CURRENT DERATING CURVE 10 10 5 10 15 20 25 30 35 25 50 75 100 125 150 REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, (oC)