CH857SPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Muti-Chip General Purpose Amplifier VOLTAGE 45 Volts APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. C H857SPT CURRENT 0.1 Ampere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP transistors in one package. (1) (6) SC-88/SOT-363 1.2~1.4 0.65 0.65 2.0~2.2 CONSTRUCTION * Two PNP transistors in one package. (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. C1 B2 5 E2 4 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 TR2 TR1 1 E1 2 B1 3 C2 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VCES VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open emitter open collector − − − − − − − Tamb ≤ 25 °C; note 1 − MIN. MAX. -50 -45 -50 -5 -100 -200 -2 300 +150 150 +150 V V V V UNIT mA mA mA mW °C °C °C −55 − −55 RATING CHARACTERISTIC ( CH857SPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 415 UNIT K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc fT NF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 30 V IC = 0; VCB = 30 V; TA = 150 OC IC = 0; VEB = - 4 V IC = -2.0 mA; VCE = -5.0V; note 1 IC = -10 mA ; IB = -0.5 mA IC = -100 mA ; I B = -5 mA IC = -2.0 mA;VCE =- 5.0 V IC = -10 mA;VCE = -5.0 V IE = ie = 0; VCB = -10V ; f = 1 MHz − − − 125 − − -600 − − MIN. − − − − − − − − 3.5 200 2.5 TYP. MAX. -15 -4.0 -15 630 -300 -650 -750 -820 − − − mV mV mV mV pF MHz dB UNIT nA uA nA IC = -10 mA; VCE = - 5 V ; − f = 100 MHz IC = -0.2 mA; VCE = - 5V;Rs = 2.0KΩ − f = 1.0 KHz; BW = 200KHz RATING CHARACTERISTIC CURVES ( CH857SPT ) Typical Pulsed Curre nt Gain vs Collector Current 500 V CE = 5V VCES AT - COLLEC TOR EM I TTE R VOLTA GE (V) h FE - TYPICAL PULSED CURRENT GAIN Coll ector -Em itt er Sa tur ati o n Vo ltage vs Coll ect or Cur re nt 0. 3 0. 25 0. 2 0. 15 400 125 C ° β = 10 300 25 C ° 200 25 C 0. 1 0. 05 0 0. 1 1 10 10 0 300 ° 100 - 40 C ° 125 C ° - 40 C ° 0 0. 01 0 .1 1 10 100 I C - COLLECTOR CURRENT (mA) I C - C OLLEC TOR C URRE NT (m A) RATING CHARACTERISTIC CURVES ( CH857SPT ) V BEON - B AS E EMITTER ON VOLTA GE (V) V BESAT - BA SE EM ITTE R VOLTA GE (V) Bas e-Em itt er Sa tur ati on Voltag e vs Co ll ect or Cur re nt 1.2 1 0.8 0.6 0.4 0.2 0 0.1 Bas e E mi tter O N Voltage vs Coll ect or Cur re nt 1 β = 10 0.8 - 40 C 25 C 125 C ° - 40 C 25 C ° ° 0.6 ° ° 125 C ° 0.4 0.2 V CE = 5V 1 10 10 0 3 00 0 0.1 1 10 100 20 0 I C - C OLLEC TOR C URRE NT (m A) I C - C OLLEC TOR C URRE NT (m A) Coll ect or -Cuto ff Cur re nt vs Ambie nt Tem per ature I CBO - C OLLE CTOR CU RR EN T (nA) V CB = 5 0V 10 BVCER - BRE AK DOWN VOLTAGE (V) 10 0 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 90 1 85 80 0. 1 75 0. 01 25 50 75 10 0 1 25 70 0.1 1 10 100 1000 T A - A MBI E NT TEMP ER ATUR E ( C) ° RESI STANCE (k Ω) V CE - COLLECTOR-EMITTER VOLTAGE (V) Colle ctor Saturation Region 4 Input and Output Capac itance vs Revers e Voltage 100 Ta = 25 °C 3 f = 1. 0 MHz 2 Ic = 100 uA 50 mA 30 0 mA CAPACITANCE ( pF) 10 Cib Cob 1 0 100 300 700 2000 4000 0.1 1 10 100 I B - BASE CURRENT ( uA) V CE - COLLECTOR VOLTAGE ( V) RATING CHARACTERISTIC CURVES ( CH857SPT ) f T - GAIN BAND WIDTH PRO DU CT (MHz) Gain Band width Product vs Collector Current 30 0 Switching Times vs Collector Current 27 0 24 0 21 0 40 Vce = 5V ts 30 TIME (nS) 18 0 15 0 12 0 90 60 30 20 IB1 = IB2 = Ic / 10 V cc = 10 V 10 tf tr td 10 20 30 50 10 0 200 30 0 0 1 10 20 50 100 150 0 I C - COLLECTO R CURRENT (mA) I C - COLLECTOR CURRENT (mA) Power Di ssi pati on vs Am b ien t Tem pe rat ur e PD - POWE R D IS SI PATION (W) 500 400 300 200 100 0 0 25 50 75 100 125 150 TE MPE RATU R E ( C ) °