CHBD2004APT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 300 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching C HBD2004APT FEATURE * Small surface mounting type. (SOT-23) * High speed. (TRR=50 nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 350mW. * Peak forward current is 625mA. * High voltage capability. .110 (2.80) .082 (2.10) .119 (3.04) SOT-23 .041 (1.05) .033 (0.85) (1) .066 (1.70) (3) CONSTRUCTION * Silicon epitaxial planar (2) MARKING * KL7 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (2) (1) .045 (1.15) .033 (0.85) .019 (0.50) (3) Dimensions in inches and (millimeters) SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1mSec. @TP= 1mSec @TP= 1Sec SYMBOL VRRM VRMS VDC IO IFSM CJ TRR R JA CHBD2004APT 300 210 240 0.2 4.0 1.0 5.0 50 357 -65 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance Operation and Storage Temperature Range C/W o TJ,TSTG C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage at IR= 100uA Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 240V @TA= 25OC @TA= 150OC NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 30mA ,reverse current of 30mA ,RL=100 3. ESD sensitive product handling required. SYMBOL BVR VF IR CHBD2004APT 300 Min. 1.0 100 100 UNITS Volts Volts nAmps uAmps 2004-07 and recovery to IRR=-3mA. RATING CHARACTERISTIC CURVES ( CHBD2004APT ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT AVERAGE FORWARD CURRENT, (%) 125 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, (oC) FORWARD CURRENT, (A) 1.0 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 75 o C 25 o C -25 o C FIG. 2 - FORWARD CHARACTERISiTICS FIG. 3 - REVERSE CHARACTERISTICS 10uA JUNCTION CAPACITANCE, (pF) Ta= 100oC FIG. 4 - TYPICAL JUNCTION CAPACITANCE 12 5 C o f=1MHz REVERSE CURRENT, (nA) 1uA 100 10 - 75oC 50oC 25oC 0oC 25oC 4 2 1.0 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGE, (V) 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME 100 REVERSE RECOVERY TIME, (nS) 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 FORWARD CURRENT, (mA) IR=30mA FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01µF D.U.T. 5 PULSE GENERATOR OUTPUT 50 100 SAMPLING OSCILLOSCOPE