CHBD2004N1PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 300 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching C HBD2004N1PT FEATURE * Small surface mounting type. (FBPT-923) * * * * High speed. (TRR=50 nSec Typ.) Suitable for high packing density. Peak forward current is 625mA. High voltage capability. 0.37(REF.) FBPT-923 0.5±0.05 1.0±0.05 CONSTRUCTION * Silicon epitaxial planar 0.25(REF.) 0.05±0.04 1.0±0.05 0.68±0.05 0.42±0.05 CIRCUIT (2) (1) 0.3±0.05 0.26±0.05 Dimensions in millimeters (3) FBPT-923 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 1mSec. @TP= 1mSec @TP= 1Sec SYMBOL VRRM VRMS VDC IO IFSM CJ TRR R JA CHBD2004N1PT 300 210 240 0.2 4.0 1.0 5.0 50 357 -65 to +150 UNITS Volts Volts Volts Amps Amps pF nSec o Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance Operation and Storage Temperature Range C/W o TJ,TSTG C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Reverse Breakdown Voltage at IR= 100uA Maximum Instantaneous Forward Voltage at IF= 100mA Maximum Average Reverse Current at VR= 240V @TA= 25OC @TA= 150OC NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 30mA ,reverse current of 30mA ,RL=100 3. ESD sensitive product handling required. SYMBOL BVR VF IR CHBD2004N1PT 300 Min. 1.0 100 100 UNITS Volts Volts nAmps uAmps 2006-07 and recovery to IRR=-3mA. RATING CHARACTERISTIC CURVES ( CHBD2004N1PT ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURRENT AVERAGE FORWARD CURRENT, (%) 125 100 75 50 25 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, (oC) FORWARD CURRENT, (A) 1.0 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) 75 o C 25 o C -25 o C FIG. 2 - FORWARD CHARACTERISiTICS FIG. 3 - REVERSE CHARACTERISTICS 10uA JUNCTION CAPACITANCE, (pF) Ta= 100oC FIG. 4 - TYPICAL JUNCTION CAPACITANCE 12 5 C o f=1MHz REVERSE CURRENT, (nA) 1uA 100 10 - 75oC 50oC 25oC 0oC 25oC 4 2 1.0 0.1 0 50 100 150 200 250 300 REVERSE VOLTAGE, (V) 0 0 2 4 6 8 10 12 14 16 18 20 REVERSE VOLTAGE, (V) FIG. 5 - REVERSE RECOVERY TIME 100 REVERSE RECOVERY TIME, (nS) 90 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 FORWARD CURRENT, (mA) IR=30mA FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01µF D.U.T. 5 PULSE GENERATOR OUTPUT 50 100 SAMPLING OSCILLOSCOPE