CHDTA114WUPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA114WUPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) (2) SC-70/SOT-323 (3) 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 1.25±0.1 0.05~0.2 0.1Min. Gnd In 1 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. -50 +10 -100 V V UNIT -30 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 200 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTA114WUPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-50V IO=-2mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V − − − − 24 7 0.37 − MIN. -0.8 − − - 0.1 − − − 10 0.47 250 TYP. − -3.0 - 0.3 -0.88 -0.5 − 13 0.57 − KΩ MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02.