CHDTA115GUPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA115GUPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=100kΩ, Typ. ) (2) SC-70/SOT-323 (3) 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 1.25±0.1 MARKING GU3 Emitter Base 1 0.05~0.2 0.1Min. 2.0~2.45 0.8~1.1 0~0.1 CIRCUIT 2 R1 TR 3 Collector Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System. SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb ≤ 25 OC, Note 1 200 150 −55 ∼ +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHDTA115GUPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -72uA IC= -5mA; IB= -0.25mA VCB= -50V VEB= -4V IC= -5mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 − − − 82 70 − − − − − − − − 100 250 TY P . − − − -0.3 -0.5 -58 − 130 − MAX. V V V V uA uA KΩ MHz UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp≤300uS; δ ≤ 0.02.