CHDTA115TEPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA115TEPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=100kΩ, Typ. ) 0.1 0.2±0.05 0.5 1.6±0.2 0.5 SC-75/SOT-416 (2) (3) 1.0±0.1 0.1 0.3±0.05 (1) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 0.1 0.2±0.05 0.8±0.1 MARKING TE5 E B 2 1 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT TR R1 3 C Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb ≤ 25 OC, Note 1 150 −55 ∼ +150 −55 ∼ +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHDTA115TEPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -1mA; IB= -0.1mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 − − − 100 70 − − − − − − − 250 100 250 TY P . − − − -0.3 -0.5 -0.5 600 130 − KΩ MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp≤300uS; δ ≤ 0.02.