CHDTA123EKPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA123EKPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT346) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=2.2kΩ, Typ. ) SC-59/SOT-346 (2) (3) 0.95 2.7~3.1 0.95 (1) 1.7~2.1 CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 0.3~0.51 1.2~1.9 MARKING EK1 Gnd In 1 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 0~0.1 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-59/SOT-346 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. -50 +10 -100 V V UNIT -12 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 200 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTA123EKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-20mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-20mA; VO=-5.0V − − − − 20 1.54 0.8 − MIN. -0.5 − − - 0.1 − − − 2.2 1.0 250 TYP. − -3.0 - 0.3 -3.8 -0.5 − 2.86 1.2 − KΩ MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTA123EKPT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 VO=−0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VCC=−5V INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : Io (A) 50 20 10 5 Ta=−40°C 25°C 100°C 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ Ta=100°C 25°C −40°C 1 500m 200m 100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current OUTPUT VOLTAGE : VO(on) (V) 1k VO=−5V Fig.4 Output voltage vs. output current 1 500m 200m 100m 50m 20m 10m 5m 2m 1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m Ta=100°C 25°C −40°C IO/II=20 DC CURRENT GAIN : GI 500 200 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m Ta=100°C 25°C −40°C OUTPUT CURRENT : IO OUTPUT CURRENT : IO (A)