CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
C HDTA124XMPT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=22kΩ, Typ. )
0.17~0.27 0.4 1.15~1.25 0.4
(1)
SOT-723
(3)
(2)
0.75~0.85 0.27~0.37
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one package.
0.17~0.27 0.75~0.85
MARKING
0.11~0.14 0.45~0.55
Gnd
In 1
CIRCUIT
2
1.15~1.25
R2 TR R1
3 Out
Dimensions in millimeters
SOT-723
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2003-12
PARAMETER Supply voltage Input voltage
CONDITIONS −
MIN.
MAX. -50 +10 -100 V V
UNIT
-40 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point −
mA -100 150 +150 150 140 mW
O
Total power dissipation Storage temperature Junction temperature Thermal resistance
C C C/W
O
O
RATING CHARACTERISTIC ( CHDTA124XMPT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-2mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-5mA; VO=-5.0V − − − − 68 15.4 1.7 − MIN. -0.4 − − -0.1 − − − 22 2.1 250 TYP. − -2.5 -0.3 -0.36 -0.5 − 28.6 2.6 − KΩ MHz MAX. V V V mA uA UNIT
Note 1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTA124XMPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current (ON characteristics)
−100 VO=−0.3V
Fig.2 Output current vs. input voltage (OFF characteristics)
−10m VCC=−5V −5m −2m −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ
Ta=100°C
25°C
INPUT VOLTAGE : VI(on) (V)
−20 −10 −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m Ta=−40°C 25°C 100°C
OUTPUT CURRENT : Io (A)
−50
−40°C
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output current
1k
Fig.4 Output voltage vs. output current
OUTPUT VOLTAGE : VO(on) (V)
−1 −500m −200m −100m −50m −20m −10m −5m −2m Ta=100°C 25°C −40°C
VO=−5V
IO/II=20
DC CURRENT GAIN : GI
500 200 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
Ta=100°C 25°C −40°C
−1m −100µ −200µ −500µ −1m −2m
−5m −10m −20m
−50m −100m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
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