CHDTA143EEPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA143EEPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-75/SOT416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) 0.1 0.2±0.05 0.5 1.6±0.2 0.5 SC-75/SOT-416 (2) (3) 1.0±0.1 0.1 0.3±0.05 CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 0.1 0.2±0.05 0.8±0.1 (1) MARKING EE2 Gnd In 1 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. -50 +10 -100 V V UNIT -30 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTA143EEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-20mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V − − − − 20 3.29 0.8 − MIN. -0.5 − − -0.1 − − − 4.7 1.0 250 TYP. − -3.0 -0.3 -1.8 -0.5 − 6.11 1.2 − KΩ MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTA143EEPT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) −100 VO=−0.3V Fig.2 Output current vs. input voltage (OFF characteristics) −10m −5m INPUT VOLTAGE : VI(on) (V) OUTPUT CURRENT : Io (A) −50 −20 −10 −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m Ta=−40°C 25°C 100°C VCC=−5V Ta=100°C −2m 25°C −1m −40°C −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 −5m −10m −20m −50m−100m −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k 500 Fig.4 Output voltage vs. output current −1 OUTPUT VOLTAGE : VO(on) (V) VO=−5V −500m −200m −100m −50m −20m −10m −5m −2m lO/lI=20 Ta=100°C 25°C −40°C DC CURRENT GAIN : GI 200 100 50 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m Ta=100°C 25°C −40°C −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m OUTPUT CURRENT : IO OUTPUT CURRENT : IO (A)