CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
C HDTA144TUPT
CURRENT 100 m A m p er e
FEATURE
* Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=47kΩ, Typ. )
(2)
SC-70/SOT-323
(3)
1.3±0.1 0.3±0.1
0.65 2.0±0.2 0.65
(1)
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one package.
1.25±0.1
MARKING
TU4
E B 2 1
0.05~0.2 0.1Min.
0.8~1.1 0~0.1 2.0~2.45
CIRCUIT
TR R1
3 C
Dimensions in millimeters
SC-70/SOT-323
LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2005-06
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1
CONDITIONS -50 -50 -5
VALUE V V V mA
UNIT
-100 Tamb ≤ 25 OC, Note 1 200 −55 ∼ +150 −55 ∼ +150 junction - soldering point 140
mW
O
C
O
C C/W
O
RATING CHARACTERISTIC ( CHDTA144TUPT )
CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.5mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 − − − 100 32.9 − − − − − − − 250 47 250 TY P . − − − -0.3 -0.5 -0.5 600 61.1 − KΩ MHz MAX. V V V V uA uA UNIT
Collector-Emitter breakdown voltage IC= -1mA
Not e 1.Pulse test: tp≤300uS; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHDTA144TUPT )
Typical Electrical Characteristics
1k 500
DC CURRENT GAIN : hFE
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1 DC current gain vs. collector current
VCE=-5V
Fig.2 Collector-emitter saturation voltage vs. collector current
-1 -500m -200m -100m -50m -20m -10m -5m -2m -1m -10u -50u -100u -500u -1m -5m -10m 100OC 25OC -40 OC lC/lB=10
200 100 50 20 10 5 2 1 -100u −1m -5m -10m -50m -100m Ta=100OC 25OC -40OC
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
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