CHDTA144WEPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTA144WEPT CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SC-75/SOT416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=47kΩ, Typ. ) 0.1 0.2±0.05 0.5 1.6±0.2 0.5 SC-75/SOT-416 (2) (3) 1.0±0.1 0.1 0.3±0.05 CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. 0.1 0.2±0.05 0.8±0.1 (1) MARKING WE2 Gnd In 1 0.15±0.05 0.1Min. 0.6~0.9 0~0.1 1.6±0.2 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. -50 +10 -30 V V UNIT -40 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHDTA144WEPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-2mA; VO=-0.3V IO=-10mA; II=-0.5mA VI=-5V VI=0V; VCC=-50V IO=-5mA; VO=-5.0V − − − 56 32.9 0.37 − MIN. -0.8 − − - 0.1 − − − 47 0.47 250 TYP. − -4.0 - 0.3 -0.16 -0.5 − 61.1 0.57 − KΩ MHz MAX. V V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02.