CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
C HDTB114EKPT
CURRENT 500 mAmpere
FEATURE
* Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=10kΩ, Typ. )
SC-59/SOT-346
(2) (3)
0.95 2.7~3.1 0.95
(1)
1.7~2.1
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one package.
0.3~0.51 1.2~1.9
MARKING
EK0
0.085~0.2
Gnd In 1
0.89~1.3 0.3~0.6 2.1~2.95 0~0.1
CIRCUIT
2
R2 TR R1
3 Out
Dimensions in millimeters
SC-59/SOT-346
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IC PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-01
PARAMETER Supply voltage Input voltage DC Output current Total power dissipation Storage temperature Junction temperature Thermal resistance
CONDITIONS −
MIN.
MAX. -50 +10 -500 200 +150 150 140 V V
UNIT
-40 − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point −
mA mW
O
C C C/W
O
O
RATING CHARACTERISTIC ( CHDTB114EKPT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-10mA; VO=-0.3V IO=-50mA; II=-2.5mA VI=-5.0V VI=0V; VCC=-50V IO=-50mA; VO=-5.0V − − − − 56 7.0 0.8 − MIN. -0.5 − − -0.1 − − − 10 1.0 200 TYP. − -3.0 -0.3 -0.88 -0.5 − 13.0 1.2 − KΩ MHz MAX. V V V mA uA UNIT
Note 1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTB114EKPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current (ON characteristics)
-100 -50 VO=- 0.3V
Fig.2 Output current vs. input voltage (OFF characteristics)
-10m VCC =- 5V
INPUT VOLTAGE : VI(on) (V)
-20 -10 -5 -2 -1 -500m -200m -100m -500u -1m -10m -100m -500m
Ta =- 40 C 25OC = 100OC
O
OUTPUT CURRENT : Io (A)
-1m
Ta=100OC 25OC -40 OC
-100u
-10u
-1u -0
-0.6
-1.0
-1.6
-2.0
-2.6
-3.0
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
1k 500
DC CURRENT GAIN : GI
Fig.3 DC current gain vs. output current
VO =- 5V
OUTPUT VOLTAGE : VO(on) (V)
Fig.4 Output voltage vs. output current
-1 -500m -200m -100m -50m -20m -10m -5m -2m
Ta=100OC 25OC -40 OC
lO/lI=20
200 100 50 20 10 5 2 1 -500u -1m
Ta=100OC 25OC -40OC
-10m
-100m
-500m
-1m -500u -1m
-10m
-100m
-500m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)
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