CHDTC114GKPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTC114GKPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=10kΩ, Typ. ) SC-59/SOT-346 (2) (3) 0.95 2.7~3.1 0.95 (1) 1.7~2.1 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.3~0.51 1.2~1.9 MARKING EKA 0.085~0.2 Emitter Base 1 0.89~1.3 0.3~0.6 2.1~2.95 0~0.1 CIRCUIT 2 R1 TR 3 Collector Dimensions in millimeters SC-59/SOT-346 LIMITING VALUES In accordance with the Absolute Maxim um Rating System . SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 50 5 100 Tamb ≤ 25 OC, Note 1 200 VALUE V V V UNIT mA mW O −55 ∼ +150 −55 ∼ +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHDTC114GKPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC=50uA IE=720uA IC=10mA; IB=0.5mA VCB=50V VEB=4V IC=5mA; VCE=5.0V IE=-5mA, VCE=10.0V f=100MHz = MIN. 50.0 50.0 5.0 − − 300 30 7.0 − − − − − − − − 10 250 TY P . − − − 0.3 0.5 580 − 13 − MAX. V V V V uA uA KΩ MHz UNIT Collector-Emitter breakdown voltage IC=1mA Not e 1.Pulse test: tp≤300uS; δ ≤ 0.02.