CHDTC144TMPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTC144TMPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-723) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=47kΩ, Typ. ) 0.17~0.27 0.4 1.15~1.25 0.4 (1) SOT-723 (3) (2) 0.75~0.85 0.27~0.37 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.17~0.27 0.75~0.85 0.11~0.14 0.45~0.55 Emitter Base 1 CIRCUIT 2 1.15~1.25 TR R1 3 Collector Dimensions in millimeters SOT-723 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 50 5 100 Tamb ≤ 25 OC, Note 1 150 VALUE V V V UNIT mA mW O −55 ∼ +150 −55 ∼ +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHDTC144TMPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=5mA/0.5mA IC=1mA; VCE=5.0V IC=5mA, VCE=10.0V f=100MHz MIN. 50 50 5.0 − − − 100 32.9 − − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 61.1 − uA uA V KΩ MHz DC current gain Input resistor Transition frequency 250 47 250 Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTC144TMPT ) Typical Electrical Characteristics Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter voltage vs. collector current COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100OC 25OC -40 OC lO/lI=10 VCE = 5V 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (uA)