CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN Digital Silicon Transistor
VOLTAGE 30 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
C HDTC314TUPT
CURRENT 600 mAmpere
FEATURE
* Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA). * High Collector current (IC(Max.)=600mA). * Internal isolated NPN transistors in one package. * Built in single resistor(R1=10kΩ, Typ. )
(2)
SC-70/SOT-323
(3)
1.3±0.1 0.3±0.1
0.65 2.0±0.2 0.65
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one package.
1.25±0.1
(1)
MARKING
TUH
Emitter Base 1
0.05~0.2 0.1Min.
0.8~1.1 0~0.1 2.0~2.45
CIRCUIT
2
TR R1
3 Collector
Dimensions in millimeters
SC-70/SOT-323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2005-06
PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1
CONDITIONS 30 15 5 600 Tamb ≤ 25 OC, Note 1 200
VALUE V V V
UNIT
mA mW
O
−55 ∼ +150 +150 junction - soldering point 140
C
O
C C/W
O
RATING CHARACTERISTIC ( CHDTC314TUPT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER
Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage
CONDITIONS IC=50uA IE=50uA VCB=20V VEB=4V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz
MIN. 30 15 5.0 − − − 100 7 − − − − − −
TYP. − − −
MAX. V V V
UNIT
Collector-emitter breakdown voltage IC=1.0mA
0.5 0.5 0.08 600 13 −
uA uA V KΩ MHz
DC current gain Input resistor Transition frequency
0.04 250 10 200
Note 1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC314TUPT )
Typical Electrical Characteristics
COLLECsaturationTOR VOLTAGE : VCE(sat) (V)
1k 500
DC CURRENT GAIN : hFE
Fig.1 DC current gain vs. collector current
VCE = 5V
Fig.2 Collector-emitter voltage vs. collector current
1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 10m 100m 500m COLLECTOR CURRENT : IC (A) Ta=100OC 25OC -40 OC lO/lI=20
200 100 50 20 10 5 2 1 1m 10m 100m 500m COLLECTOR CURRENT : IC (A) Ta=100OC 25OC -40OC
很抱歉,暂时无法提供与“CHDTC314TUPT”相匹配的价格&库存,您可以联系我们找货
免费人工找货