CHDTC643TKPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTC643TKPT CURRENT 6 00 mAmpere FEATURE * Small surface mounting type. (SOT-23) * In addition to the features of regular digital transistor. ideal for muting circuits. * These transistors can be used at high current levels,IC=600mA * Internal isolated NPN transistors in one package. * Built in single resistor(R1=4.7kΩ, Typ. ) .041 (1.05) .033 (0.85) SOT-23 VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. (2) MARKING .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) Emitter Base 1 CIRCUIT 2 .045 (1.15) .033 (0.85) TR R1 3 Collector .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-09 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature CONDITIONS 20 20 12 600 Tamb ≤ 25 OC, Not e 1 200 VALUE V V V UNIT mA mW O O −55 ∼ +150 −55 ∼ +150 C C RATING CHARACTERISTIC ( CHDTC643TKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT RON PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=20V VEB=12V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz MIN. 20 20 12 − − − 820 3.29 − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 150 2700 6.11 − − uA uA mV KΩ MHz Ω 40 − 4.7 150 0.55 DC current gain Input resistor Transition frequency Output "ON" resistance VI=5V,RL=1KΩ ,f=1KHZ − Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTC643TKPT ) Typical Electrical Characteristics 10000 Ta=100°C Ta=25°C Ta= −40°C VCE=5V 10000 IC / IB=20 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) DC CURRENT GAIN : hFE 1000 1000 100 Ta=100°C Ta=25°C Ta= −40°C 10 100 0.1 1 10 100 1000 1 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 DC Current Gain vs. Collector Current Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current 1000 ON RESISTANCE : Ron (Ω) 100 Ta=25°C f=1kHz RL=1kΩ hFE=1500 (5V / 50mA) 10 1 0.1 0.1 1 10 100 INPUT VOLTAGE : VI (V) Fig.3 "ON" resistance vs. Input Voltage