CHDTD143TKPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTD143TKPT CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in single resistor(R1=4.7kΩ, Typ. ) SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) Emitter Base 1 CIRCUIT 2 .045 (1.15) .033 (0.85) TR R1 .019 (0.50) 3 Collector Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 40 5 500 Tamb ≤ 25 OC, Note 1 200 VALUE V V V UNIT mA mW O −55 ∼ +150 −55 ∼ +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHDTD143TKPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz MIN. 50 40 5.0 − − − 100 3.29 − − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 6.11 − uA uA V KΩ MHz DC current gain Input resistor Transition frequency 250 4.7 200 Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTD143TKPT ) Typical Electrical Characteristics Fig.1 DC current gain vs. collector current COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter voltage vs. collector current 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 500u 1m 2m 500 5m 10m 20m 50m 100m 200m 500m Ta=100OC 25OC -40 OC lO/lI=20 VCE = 5V 200 100 50 20 10 5 2 1 500u 1m 2m 5m 10m 20m 50m 100m 200m 500m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (uA) COLLECTOR CURRENT : IC (uA)