CHEMA3PT

CHENMKO ENTERPRISE CO.,LTD S URFACE MOUNT Dual Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HE MA3 PT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SOT-553) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTA143T in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) (4) (3) SOT553 0.50 0.9~1.1 (5) (1) 0.50 1.5~1.7 0.15~0.3 MARKING * A3 0.5~0.6 1.1~1.3 0.19~0.18 1.5~1.7 CIRCUIT 3 R1 2 R1 1 4 5 Dimensions in millimeters SOT553 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 junction - soldering point Tamb ≤ 25 OC, Note 1 CONDITIONS -50 -50 -5 -100 150 −55 ∼ +150 −55 ∼ +150 140 VALUE V V V mA mW O UNIT C O C C/W 2004-07 O RATING CHARACTERISTIC ( CHEMA3PT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC= -50uA IE= -50uA IC= -5mA; IB= -0.25mA VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = MIN. -50.0 -50.0 -5.0 − − − 100 3.29 − − − − − − − 250 4.7 250 TY P . − − − -0.3 -0.5 -0.5 600 6.11 − KΩ MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA Not e 1.Pulse test: tp≤300uS; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( CHEMA3PT ) Typical Electrical Characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC VCE=-5V 200 100 50 20 10 5 2 1 -100u −1m -5m -10m -50m -100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)