CHEMG2PT

CHEMG2PT

  • 厂商:

    CHENMKO(力勤)

  • 封装:

  • 描述:

    CHEMG2PT - Dual Digital Silicon Transistor - Chenmko Enterprise Co. Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
CHEMG2PT 数据手册
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HEMG2PT CURRENT 30 mAmpere FEATURE * Small surface mounting type. (SOT-553) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Two CHDTC144E transistors in one package. Built in bias resistor(R1=47kΩ, Typ. ) (4) (3) SOT553 0.50 0.9~1.1 (5) (1) 0.50 1.5~1.7 0.15~0.3 MARKING * G2 0.5~0.6 1.1~1.3 0.19~0.18 1.5~1.7 CIRCUIT 3 R1 R2 2 R1 R2 1 4 5 Dimensions in millimeters SOT553 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-A Note 1. Transistor mounted on an FR4 printed-circuit board. Total power dissipation Storage temperature Junction temperature Thermal resistance junction - ambient air Tamb ≤ 25 OC, Note 1 PARAMETER Supply voltage Input voltage CONDITIONS − -10 − − − −55 − − MIN. MAX. 50 +40 30 mA 100 200 +150 150 625 mW O UNIT V V C C C/W 2004-07 O O RATING CHARACTERISTIC ( CHEMG2PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=2mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=5mA; VO=5.0V − − − − 68 32.9 0.8 − MIN. 0.5 − − − − − − 47 1.0 250 TYP. MAX. − 3.0 0.3 0.18 0.5 − 61.1 1.2 − KΩ MHz V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMG2PT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 50 VO=0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m OUTPUT CURRENT : Io (A) VCC=5V INPUT VOLTAGE : VI(on) (V) 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta =- 40OC 25OC = 100OC 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100OC 25OC -40 OC 0.5 1.0 1.5 2.0 2.5 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k 500 DC CURRENT GAIN : GI Fig.4 Output voltage vs. output current 1 500m OUTPUT VOLTAGE : VO(on) (V) VO =5V Ta=100OC 25OC -40OC lO/lI=20 Ta=100OC 25OC -40 OC 200 100 50 20 10 5 2 200m 100m 50m 20m 10m 5m 2m 1 100 200 500 1m 2m 5m 10m 20m 50m100m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)
CHEMG2PT
1. 物料型号: - 型号为CHEMG2PT。

2. 器件简介: - CHEMG2PT是一种双数字硅晶体管,无铅表面贴装器件,电压50伏,电流30毫安培。适用于开关电路、反相器、接口电路和驱动电路。

3. 引脚分配: - 封装类型为SOT-553,具有小表面积安装类型,高电流增益,适合高封装密度,并且具有低集电极-发射极饱和电压和高饱和电流能力。一个封装内有两个CHDTC144E晶体管。

4. 参数特性: - 供电电压(Vcc)最大50V,输入电压(VIN)范围为-10V至+40V,直流输出电流(Io)最大30mA,最大集电极电流(Ic(Max.))为100mA,总功率耗散(PTOT)在环境温度25°C时最大200mW,存储温度(TSTG)范围55°C至+150°C,结温(TJ)最大150°C,热阻(ROJ-A)从结到环境空气625°C/W。

5. 功能详解: - 输入关断电压(Vlotr))在Io=100uA和Vcc=5.0V时最小0.5V;输入开启电压(VI(an))在Io=2mA和Vo=0.3V时最大3.0V;输出电压(Vo(on))在Io=10mA和Ii=0.5mA时最大0.3V;输入电流(Ii)在VI=5V时最大0.18mA;输出电流(Ic(otf))在VI=0V和Vcc=50V时最大0.5uA;直流电流增益(hFE)在Io=5mA和Vo=5.0V时最小68;输入电阻(R1)为32.9kΩ至61.1kΩ;电阻比例(R2/R1)为0.8至1.2;转换频率(fT)在IE=-5mA和VCE=10.0V时为100MHz至250MHz。

6. 应用信息: - 适用于开关电路、反相器、接口电路和驱动电路。

7. 封装信息: - 封装类型为SOT-553,尺寸以毫米为单位。
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