CHEMG3PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HEMG3PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-553) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Two CHDTC143T chips in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) (4) (3) SOT553 0.50 0.9~1.1 (5) (1) 0.50 1.5~1.7 0.15~0.3 MARKING * G3 0.5~0.6 1.1~1.3 0.19~0.18 1.5~1.7 CIRCUIT 3 R1 2 R1 1 4 5 Dimensions in millimeters SOT553 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Tamb ≤ 25 OC, Note 1 CONDITIONS 50 50 5 100 150 −55 ∼ +150 VALUE V V V mA mW O UNIT C TJ Note Junction temperature 150 O C 2004-07 1. Transistor mounted on an FR4 printed-circuit board. RATING CHARACTERISTIC ( CHEMG3PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage Collector-Emitter Saturation voltage Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency CONDITIONS IC=50uA IE=50uA IC=5mA; IB=0.25mA VCB=50V VEB=4V IC=1mA; VCE=5.0V IE=-5mA, VCE=10.0V f=100MHz = M IN. 50.0 50.0 5.0 − − − 100 3.29 − − − − − − − 250 4.7 250 TY P . − − − 0.3 0.5 0.5 600 6.11 − KΩ MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC=1mA Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMG3PT ) Typical Electrical Characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter saturation voltage vs. collector current 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100u 500u 1m 5m 10m 50m 100m 100OC 25OC -40 OC lC/lB=20 VCE=-5V Ta=100 C 25OC -40 C O O 200 100 50 20 10 5 2 1 -100 -500 −1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)