CHEMH4PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HEMH4PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTC114T in one package. Built in bias resistor(R1=10kΩ, Typ. ) SOT-563 (1) (5) 0.9~1.1 0.15~0.3 (3) (4) 0.50 0.50 1.5~1.7 MARKING * H4 1.1~1.3 0.5~0.6 0.09~0.18 3 R1 1 CIRCUIT 1.5~1.7 R1 4 6 Dimensions in millimeters SOT-563 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-07 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. 50 -5 V V UNIT − − Tamb ≤ 25 OC, Note 1 − −55 − junction - Ambient Air − 100 mA 100 150 +150 150 625 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHEMH4PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=1mA/0.1mA IC=1mA; VCE=5.0V IE=-5mA, VCE=10.0V f=100MHz MIN. 50 50 5.0 − − − 100 7.0 − − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 13.0 − uA uA V KΩ MHz DC current gain Input resistor Transition frequency 250 10.0 250 Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMH4PT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 10 VO=0.2V Fig.2 Output current vs. input voltage (OFF characteristics) 100m VCC=5V Ta= 75OC 25OC -25 OC OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 10m 1 Ta =- 25OC 25OC = 75OC 1m 100u 10u 100m 0 10m 20m 30m 40m 50m 1u 0 1 2 3 4 5 6 7 8 9 10 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k VO =10V OUTPUT VOLTAGE : VO(on) (V) Fig.4 Output voltage vs. output current 1 lO/lI=10 DC CURRENT GAIN : GI 100 Ta= 75 OC 25OC -25OC 100m Ta= 75 OC 25OC -25 OC 10 10m 10 1m 10m OUTPUT CURRENT : IO (A) 100m 1m 0 10m 20m 30m 40m 50m OUTPUT CURRENT : IO (A)